Plasma emission spectroscopy for studying Bi2S3 produced by pulsed laser deposition and effects of substrate temperature on structural, morphological, and optical properties of thin films
IF 3.9 3区 材料科学Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
K. Rodríguez-Rosales , J. Cruz-Gómez , J. Santos Cruz , A. Guillén-Cervantes , F. de Moure-Flores , M. Villagrán-Muniz
{"title":"Plasma emission spectroscopy for studying Bi2S3 produced by pulsed laser deposition and effects of substrate temperature on structural, morphological, and optical properties of thin films","authors":"K. Rodríguez-Rosales , J. Cruz-Gómez , J. Santos Cruz , A. Guillén-Cervantes , F. de Moure-Flores , M. Villagrán-Muniz","doi":"10.1016/j.mseb.2024.117867","DOIUrl":null,"url":null,"abstract":"<div><div>This research underscores the role of plasma analysis in enhancing the reproducibility of Bi<sub>2</sub>S<sub>3</sub> thin films synthesized via pulsed laser deposition (PLD). Through optical emission spectroscopy (OES), we analyzed the dynamics of the Bi<sub>2</sub>S<sub>3</sub> plasma, focusing on the transitions of neutral and singly ionized sulfur and bismuth atoms. Thin films were grown at varying substrate temperatures (WST, 100 °C, 150 °C, 200 °C, and 250 °C), and structural and morphological characterizations confirmed a polycrystalline nature, with particle size increasing at higher deposition temperatures. The films exhibited transmittance values ranging from 8 % to 26 % and a bandgap from 1.61 to 1.75 eV as the substrate temperature increased. Bi<sub>2</sub>S<sub>3</sub> films also demonstrated n-type conductivity at temperatures above room temperature. These findings highlight the influence of substrate temperature on the structural and optoelectronic properties of Bi<sub>2</sub>S<sub>3</sub> films, with optimal characteristics for optoelectronic applications consistently achieved at deposition temperatures between 150 °C and 200 °C.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"312 ","pages":"Article 117867"},"PeriodicalIF":3.9000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510724006962","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This research underscores the role of plasma analysis in enhancing the reproducibility of Bi2S3 thin films synthesized via pulsed laser deposition (PLD). Through optical emission spectroscopy (OES), we analyzed the dynamics of the Bi2S3 plasma, focusing on the transitions of neutral and singly ionized sulfur and bismuth atoms. Thin films were grown at varying substrate temperatures (WST, 100 °C, 150 °C, 200 °C, and 250 °C), and structural and morphological characterizations confirmed a polycrystalline nature, with particle size increasing at higher deposition temperatures. The films exhibited transmittance values ranging from 8 % to 26 % and a bandgap from 1.61 to 1.75 eV as the substrate temperature increased. Bi2S3 films also demonstrated n-type conductivity at temperatures above room temperature. These findings highlight the influence of substrate temperature on the structural and optoelectronic properties of Bi2S3 films, with optimal characteristics for optoelectronic applications consistently achieved at deposition temperatures between 150 °C and 200 °C.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.