Plasma emission spectroscopy for studying Bi2S3 produced by pulsed laser deposition and effects of substrate temperature on structural, morphological, and optical properties of thin films

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
K. Rodríguez-Rosales , J. Cruz-Gómez , J. Santos Cruz , A. Guillén-Cervantes , F. de Moure-Flores , M. Villagrán-Muniz
{"title":"Plasma emission spectroscopy for studying Bi2S3 produced by pulsed laser deposition and effects of substrate temperature on structural, morphological, and optical properties of thin films","authors":"K. Rodríguez-Rosales ,&nbsp;J. Cruz-Gómez ,&nbsp;J. Santos Cruz ,&nbsp;A. Guillén-Cervantes ,&nbsp;F. de Moure-Flores ,&nbsp;M. Villagrán-Muniz","doi":"10.1016/j.mseb.2024.117867","DOIUrl":null,"url":null,"abstract":"<div><div>This research underscores the role of plasma analysis in enhancing the reproducibility of Bi<sub>2</sub>S<sub>3</sub> thin films synthesized via pulsed laser deposition (PLD). Through optical emission spectroscopy (OES), we analyzed the dynamics of the Bi<sub>2</sub>S<sub>3</sub> plasma, focusing on the transitions of neutral and singly ionized sulfur and bismuth atoms. Thin films were grown at varying substrate temperatures (WST, 100 °C, 150 °C, 200 °C, and 250 °C), and structural and morphological characterizations confirmed a polycrystalline nature, with particle size increasing at higher deposition temperatures. The films exhibited transmittance values ranging from 8 % to 26 % and a bandgap from 1.61 to 1.75 eV as the substrate temperature increased. Bi<sub>2</sub>S<sub>3</sub> films also demonstrated n-type conductivity at temperatures above room temperature. These findings highlight the influence of substrate temperature on the structural and optoelectronic properties of Bi<sub>2</sub>S<sub>3</sub> films, with optimal characteristics for optoelectronic applications consistently achieved at deposition temperatures between 150 °C and 200 °C.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"312 ","pages":"Article 117867"},"PeriodicalIF":3.9000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510724006962","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This research underscores the role of plasma analysis in enhancing the reproducibility of Bi2S3 thin films synthesized via pulsed laser deposition (PLD). Through optical emission spectroscopy (OES), we analyzed the dynamics of the Bi2S3 plasma, focusing on the transitions of neutral and singly ionized sulfur and bismuth atoms. Thin films were grown at varying substrate temperatures (WST, 100 °C, 150 °C, 200 °C, and 250 °C), and structural and morphological characterizations confirmed a polycrystalline nature, with particle size increasing at higher deposition temperatures. The films exhibited transmittance values ranging from 8 % to 26 % and a bandgap from 1.61 to 1.75 eV as the substrate temperature increased. Bi2S3 films also demonstrated n-type conductivity at temperatures above room temperature. These findings highlight the influence of substrate temperature on the structural and optoelectronic properties of Bi2S3 films, with optimal characteristics for optoelectronic applications consistently achieved at deposition temperatures between 150 °C and 200 °C.
利用等离子体发射光谱研究脉冲激光沉积生成的 Bi2S3 以及基底温度对薄膜结构、形态和光学特性的影响
这项研究强调了等离子体分析在提高通过脉冲激光沉积 (PLD) 合成的 Bi2S3 薄膜的可重复性方面的作用。通过光学发射光谱 (OES),我们分析了 Bi2S3 等离子体的动态,重点是中性和单电离硫原子和铋原子的跃迁。薄膜是在不同的基底温度(WST、100 °C、150 °C、200 °C和250 °C)下生长的,其结构和形态特征证实了其多晶性质,在较高的沉积温度下,颗粒尺寸会增大。随着基底温度的升高,薄膜的透射率从 8 % 到 26 % 不等,带隙从 1.61 到 1.75 eV 不等。Bi2S3 薄膜在室温以上还表现出 n 型导电性。这些发现凸显了基底温度对 Bi2S3 薄膜的结构和光电特性的影响,光电应用的最佳特性始终是在 150 °C 至 200 °C 的沉积温度下实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信