Simulation of peak properties in thermoluminescence dosimeters with the potential stimulation of all electron traps

IF 2.8 3区 物理与天体物理 Q3 CHEMISTRY, PHYSICAL
Aristophanes Touliopoulos, George Kitis
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引用次数: 0

Abstract

In thermoluminescence (TL) models, the competition between energy levels for electron trapping is a direct consequence of conduction band mediation in electron transport. From a theoretical perspective, these competitive effects are considered responsible for many TL phenomena. Furthermore, while they are easily detectable in simulation studies, there are no clear and reliable criteria for their experimental verification. In the present work, it is suggested that in certain materials with narrow band gap energies, existing electron traps can be accessed by thermal stimulation up to 500 °C. It is possible to predict properties through simulation that can then be verified experimentally. The simulation is applied to a complex TL glow curve consisting of four electron trapping levels and one luminescence center. With the appropriate selection of simulation parameter values, the competition is limited solely to electron transport, rather than to significant differences in parameter values. The simulation indicated that the last peak serves as the primary competitor. Furthermore, the shape of the TL glow curve depends on the strength of the competition. When the competitor is strong, the lower temperature peaks behave as first-order peaks, and the shape of the glow curve remains stable as a function of dose. The last peak, which acts as the final competitor, exhibits behavior similar to that of the peak derived from the one trap, one recombination (OTOR) model. This OTOR-like behavior provides an excellent experimental test for the simulation results and, consequently, for the model used. The validity of the simulation was assessed by comparing the input values of kinetic parameters with the output values obtained from computerized glow curve deconvolution (CGCD) analysis for each TL glow curve.
模拟热释光剂量计中所有电子阱的电位激发峰值特性
在热致发光(TL)模型中,电子捕获能级之间的竞争是电子传输中导带调解的直接结果。从理论角度看,这些竞争效应被认为是许多 TL 现象的原因。此外,虽然它们在模拟研究中很容易检测到,但却没有明确可靠的实验验证标准。本研究提出,在某些具有窄带隙能量的材料中,通过高达 500 °C 的热刺激可以进入现有的电子陷阱。通过模拟可以预测其特性,然后通过实验进行验证。模拟应用于由四个电子阱和一个发光中心组成的复杂 TL 辉光曲线。通过适当选择模拟参数值,竞争只局限于电子传输,而不是参数值的显著差异。模拟结果表明,最后一个峰是主要的竞争者。此外,TL 辉光曲线的形状取决于竞争的强度。当竞争者较强时,较低温度峰表现为一阶峰,辉光曲线的形状随剂量的变化而保持稳定。最后一个峰作为最后的竞争者,其表现类似于从一个陷阱、一个重组(OTOR)模型中得出的峰值。这种类似于 OTOR 的行为为模拟结果提供了极好的实验检验,从而也检验了所使用的模型。通过比较动力学参数的输入值和计算机辉光曲线解卷积(CGCD)分析获得的每条 TL 辉光曲线的输出值,评估了模拟的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Radiation Physics and Chemistry
Radiation Physics and Chemistry 化学-核科学技术
CiteScore
5.60
自引率
17.20%
发文量
574
审稿时长
12 weeks
期刊介绍: Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing. The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.
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