Study of the structural, morphological, and J–V characteristics of Zr-doped barium calcium strontium titanate

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Md. Parvej Mosaraf Sohel, Abdullah Al Moyeen, Ainul Islam Safi, Md. Sadrul Rahman Dipto, Shaadnan Bin Syed
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Abstract

Barium calcium strontium titanate (BCST) ceramics are promising materials for energy storage and dielectric applications, but their performance is often limited by high leakage currents and structural instability. To address these, Zr-doped BCST (Ba0.7Ca0.15Sr0.15ZrxTi(1-x)O3; x = 0.0, 0.1, 0.15, 0.2) ceramics were synthesized via the solid-state reaction method with the objective of reducing leakage currents in BCST ceramics. X-ray diffraction (XRD) analysis confirmed a single-phase-pseudocubic ABO3 structure with space group Pm-3mn all samples and a secondary ZrO2 phase in Zr-doped samples. Rietveld refinement revealed an increase in lattice parameters and unit cell volumes with higher doping, ranging from 62.483 to 63.363 Å3. The SEM images showed cubic and rod-shaped morphologies with agglomerates and pores, with grain sizes ranging between 0.543 μm and 0.727 μm. EDS analysis confirmed the presence of all constituent elements. Current density–voltage (J–V) analysis showed that the leakage current density increased non-linearly with voltage for all samples, with Zr doping significantly reducing leakage currents by enhancing chemical stability and suppressing electron jumps between Ti4+ and Ti3+. Among the samples, undoped BCST exhibited the highest leakage current, while Zr-doped samples showed improved resistivity and lower leakage currents. These properties make Zr-doped BCST ceramics promising candidates for energy storage devices and dielectric applications requiring high resistivity and low leakage currents.

Abstract Image

掺杂 Zr 的钛酸钡钙锶的结构、形态和 J-V 特性研究
钛酸钡钙锶(BCST)陶瓷是一种很有前途的储能和介电应用材料,但其性能往往受到高漏电流和结构不稳定性的限制。为了解决这些问题,我们通过固态反应方法合成了掺杂 Zr 的 BCST(Ba0.7Ca0.15Sr0.15ZrxTi(1-x)O3;x = 0.0、0.1、0.15、0.2)陶瓷,目的是降低 BCST 陶瓷的泄漏电流。X 射线衍射(XRD)分析证实,所有样品都具有空间群为 Pm-3mn 的单相伪立方体 ABO3 结构,而在掺杂 Zr 的样品中则存在次生 ZrO2 相。Rietveld 精炼显示,随着掺杂量的增加,晶格参数和单胞体积也在增加,范围从 62.483 Å3 到 63.363 Å3。扫描电子显微镜图像显示出立方体和棒状的形态,并伴有团聚和孔隙,晶粒大小在 0.543 μm 和 0.727 μm 之间。EDS 分析证实了所有组成元素的存在。电流密度-电压(J-V)分析表明,所有样品的漏电流密度都随电压呈非线性增长,掺杂 Zr 能增强化学稳定性并抑制 Ti4+ 和 Ti3+ 之间的电子跃迁,从而显著降低漏电流。在所有样品中,未掺杂 BCST 的漏电流最高,而掺杂 Zr 的样品电阻率更高,漏电流更低。这些特性使得掺杂 Zr 的 BCST 陶瓷有望用于要求高电阻率和低漏电流的储能设备和介电应用。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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