Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-26 DOI:10.1063/5.0228938

Y. Liu, X. Jin, H. Jung, S. Lee, F. Harun, J. S. Ng, S. Krishna, J. P. R. David

引用次数: 0

Abstract

The application of an electric field to a semiconductor can alter its absorption properties. This electroabsorption effect can have a significant impact on the quantum efficiency of detector structures. The photocurrents in bulk InGaAs and GaAsSb p-i-n photodiodes with intrinsic absorber layer thicknesses ranging from 1 to 4.8 μm have been investigated. By using phase-sensitive photocurrent measurements as a function of wavelength, the absorption coefficients as low as 1 cm−1 were extracted for electric fields up to 200 kV/cm. Our findings show that while the absorption coefficients reduce between 1500 and 1650 nm for both materials when subject to an increasing electric field, an absorption coefficient of 100 cm−1 can be obtained at a wavelength of 2 μm, well beyond the bandgap energy when they are subject to a high electric field. The results are shown to be in good agreement with theoretical models that use Airy functions to solve the absorption coefficients in a uniform electric field.

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InGaAs 和 GaAsSb pi-n 光电二极管中的电吸收现象

对半导体施加电场可改变其吸收特性。这种电吸收效应会对探测器结构的量子效率产生重大影响。我们研究了本征吸收层厚度为 1 至 4.8 μm 的 InGaAs 和 GaAsSb pi-n 体光电二极管中的光电流。通过测量相敏光电流与波长的函数关系，提取了电场高达 200 kV/cm 时低至 1 cm-1 的吸收系数。我们的研究结果表明，当电场增加时，这两种材料在 1500 和 1650 nm 之间的吸收系数都会降低，而当它们受到高电场作用时，在 2 μm 的波长处可以获得 100 cm-1 的吸收系数，远远超过带隙能量。研究结果表明，这些结果与使用 Airy 函数求解均匀电场中吸收系数的理论模型十分吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.