Spatial and reconfigurable control of photoluminescence from single-layer MoS2 using a strained VO2-based Fabry–Pérot cavity

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-26 DOI:10.1063/5.0236517

Koyo Nakayama, Shota Toida, Takahiko Endo, Mitsuru Inada, Shingo Sato, Hiroshi Tani, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Yasumitsu Miyata, Kazunari Matsuda, Mahito Yamamoto

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引用次数: 0

Abstract

We investigated the photoluminescence (PL) from single-layer MoS2 on VO2 platelets grown on SiO2, where the insulating and metallic phases can coexist above a bulk transition temperature of 340 K, due to the inhomogeneous strain. We found that the intensity of PL from MoS2 on metallic VO2 is higher than that on the insulating counterpart, resulting in spatially varying PL even at the sub-micrometer scale. In contrast to the intensity, the PL peak energies were observed to be nearly identical on insulating and metallic VO2, indicating that the influences of charge transfer, strain, and dielectric screening on MoS2 are comparable, regardless of the phase state. Thus, the observed difference in PL intensity is due to the difference in refractive indices of insulating and metallic VO2, leading to the phase-dependent Fabry–Pérot interference effect. We performed numerical simulations for the emission from MoS2 supported on the VO2-based Fabry–Pérot interferometer. The calculated emission intensity ratio on insulating and metallic VO2 well reproduces the experimental observations. These results suggest a strategy for controlling PL from two-dimensional semiconductors in a spatial and reconfigurable manner.

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利用基于应变 VO2 的法布里-佩罗腔对单层 MoS2 的光致发光进行空间和可重构控制

我们研究了在二氧化硅上生长的 VO2 小板上的单层 MoS2 的光致发光（PL），由于不均匀应变，在 340 K 的体转变温度以上，绝缘相和金属相可以共存。我们发现，金属 VO2 上 MoS2 的聚光强度要高于绝缘体上的聚光强度，因此即使在亚微米尺度上也会产生空间变化的聚光。与强度相反，在绝缘和金属 VO2 上观察到的聚光峰能量几乎相同，这表明电荷转移、应变和介电屏蔽对 MoS2 的影响是相似的，与相态无关。因此，观察到的聚光强度差异是由于绝缘和金属 VO2 的折射率不同，导致了与相位相关的法布里-佩罗干涉效应。我们对基于 VO2 的法布里-佩罗干涉仪上支持的 MoS2 的发射进行了数值模拟。计算得出的绝缘和金属 VO2 上的发射强度比很好地再现了实验观测结果。这些结果为以空间和可重构的方式控制二维半导体的聚光提供了一种策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.