Porous Haldane model: topological phase transitions and flat bands.

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
Fan Yang, Yi-Xuan Ling, Xu-Hui Yan, Lu Qi, Xiuyun Zhang, Ying Han, Ai-Lei He
{"title":"Porous Haldane model: topological phase transitions and flat bands.","authors":"Fan Yang, Yi-Xuan Ling, Xu-Hui Yan, Lu Qi, Xiuyun Zhang, Ying Han, Ai-Lei He","doi":"10.1088/1361-648X/ad9723","DOIUrl":null,"url":null,"abstract":"<p><p>To investigate the influence of nanoholes on Chern insulators (CIs), we propose a porous Haldane model that considers the nearest-neighbor (NN) hoppings and next-NN (NNN) hoppings with staggered magnetic fluxes. This model supports multiple topological phases with different filling factors. At 2/5 filling, CI phases withC=±1,<i>C</i> = 2,C=±3,C=±4and higher-order topological insulator (HOTI) appear. At 9/20 filling, CI withC=±1,<i>C</i> = 2,<i>C</i> = 3, and HOTI phases are obtained. At half-filling, this model exhibits CI withC=±1,<i>C</i> = 2, andC=-3and HOTI phases. Unlike conventional HOTIs, these HOTI phases host gapless edge states and robust corner states which are characterized by a quantized quadrupole. Additionally, there is a topological flat band (TFB) with a flatness ratio about 13 with the NN and NNN hoppings. Based on the TFB model, we further investigate aν=1/2fractional CI state with hard-core bosons filling.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics: Condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-648X/ad9723","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

Abstract

To investigate the influence of nanoholes on Chern insulators (CIs), we propose a porous Haldane model that considers the nearest-neighbor (NN) hoppings and next-NN (NNN) hoppings with staggered magnetic fluxes. This model supports multiple topological phases with different filling factors. At 2/5 filling, CI phases withC=±1,C = 2,C=±3,C=±4and higher-order topological insulator (HOTI) appear. At 9/20 filling, CI withC=±1,C = 2,C = 3, and HOTI phases are obtained. At half-filling, this model exhibits CI withC=±1,C = 2, andC=-3and HOTI phases. Unlike conventional HOTIs, these HOTI phases host gapless edge states and robust corner states which are characterized by a quantized quadrupole. Additionally, there is a topological flat band (TFB) with a flatness ratio about 13 with the NN and NNN hoppings. Based on the TFB model, we further investigate aν=1/2fractional CI state with hard-core bosons filling.

多孔霍尔丹模型:拓扑相变与平带
为了研究纳米孔对切尔绝缘体(CIs)的影响,我们提出了一种多孔霍尔丹模型,考虑了交错磁通量的最近邻(NNN)跳变和次最近邻(NNN)跳变。该模型支持不同填充因子的多个拓扑阶段。在 2/5 填充时,出现了 C=±1、C=2、C=±3、C=±4 和高阶拓扑绝缘体(HOTI)的切尔绝缘体(CI)相。在 9/20 填充时,会出现 C=±1、C=2、C=3 的 CI 和 HOTI 相。在半填充时,该模型显示出具有 C=±1、C=2 和 C=-3 的 CI 和 HOTI 相。与传统的 HOTI 不同,这些 HOTI 相包含无间隙边缘态和稳健的角态,其特征是量子化的四极。此外,还存在一个拓扑平坦带(TFB),其平坦率约为 13,具有 NNN 和 NNN 跳频。在拓扑平带模型的基础上,我们进一步研究了具有硬核玻色子填充的 ν=1/2 分数切尔绝缘体态。
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来源期刊
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter 物理-物理:凝聚态物理
CiteScore
5.30
自引率
7.40%
发文量
1288
审稿时长
2.1 months
期刊介绍: Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.
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