Impact of lanthanum doping on growth, thermal stability, linear and nonlinear optical properties of metal coordinated amino acid based single crystals of glycine copper chloride

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tariq Mustafa, Sonali Thakur, D. Kanimozhi, K. K. Bamzai
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引用次数: 0

Abstract

This study aimed to enhance various physicochemical characteristics of lanthanum doped glycine copper chloride single crystals, which includes crystal habits, thermal stability, nonlinear optical behaviour and electrical properties. Organometallic crystal complexes with molar stoichiometric formula (C2H5NO2CuCl2)1−x [La(NO3)3]x, where [x = 0.00, 0.05, 0.10, 0.20] have been grown successfully in the absence and presence of lanthanum nitrate at various concentrations using slow solvent evaporation technique (SSET). The morphology of crystals displayed noticeable differences and the impact of La3+ doping on growth, optical, thermal and electrical properties. The lattice parameters examined through single crystal X-ray diffraction (SCXRD) technique confirms the tetragonal crystal system. Powder X-ray diffraction (PXRD) revealed diffraction planes displaying sharp and strong peaks suggesting excellent crystallinity of the crystals. The Rietveld refinements of PXRD data further validate the results with low values of goodness factor (χ2). Ultraviolet–Visible (UV–Vis) spectroscopy demonstrated outstanding linear optical properties with a lower cut off wavelength ranging from 224 to 244 nm. The energy bandgap found to be increasing with La3+ doping and lies in the range of 5.43–5.56 eV. High thermal stability was observed across all the grown crystals, with an increase noted with the addition of lanthanum concentration. Dielectric studies conducted as a function of temperature revealed the electrical properties of the crystals. The value of frequency exponent ‘n’ is found to be less than 1 which suggests that the motion involved is characterized by translational movement with sudden hopping transitions. Z-scan analysis confirmed the third order nonlinear optical (TONLO) response of the crystals. The calculated parameters n2, β, and χ(3) showed large values, indicating that the grown compositions are suitable for practical nonlinear optical device applications.

掺杂镧对基于金属配位氨基酸的甘氨酸氯化铜单晶的生长、热稳定性、线性和非线性光学特性的影响
本研究旨在提高掺杂镧的氯化甘氨酸铜单晶的各种理化特性,包括晶体习性、热稳定性、非线性光学行为和电学特性。利用慢溶剂蒸发技术(SSET),在没有硝酸镧和有硝酸镧的情况下,成功地生长出了摩尔计量式为 (C2H5NO2CuCl2)1-x [La(NO3)3]x 的有机金属晶体复合物,其中 [x = 0.00、0.05、0.10、0.20]。晶体的形态显示出明显的差异,以及掺杂 La3+ 对生长、光学、热学和电学特性的影响。通过单晶 X 射线衍射(SCXRD)技术检测的晶格参数证实了其为四方晶系。粉末 X 射线衍射 (PXRD) 显示衍射平面显示出尖锐而强烈的峰值,表明晶体的结晶度极佳。对 PXRD 数据进行的里特维尔德细化进一步验证了结果,其良好系数(χ2)值较低。紫外-可见(UV-Vis)光谱显示了出色的线性光学特性,较低的截止波长范围为 224 至 244 nm。能带隙随着 La3+ 的掺杂而增大,范围在 5.43-5.56 eV 之间。所有生长出来的晶体都具有较高的热稳定性,随着镧浓度的增加,热稳定性也有所提高。随温度变化而进行的介电研究揭示了晶体的电学特性。发现频率指数 "n "的值小于 1,这表明晶体的运动特点是平移运动和突然的跳跃转换。Z 扫描分析证实了晶体的三阶非线性光学(TONLO)响应。计算得出的参数 n2、β 和 χ(3) 显示出很大的值,表明所生长的成分适合实际的非线性光学器件应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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