Growth of large-size semi-organic piperazinium tetrachlorozincate monohydrate (PTCZM) single crystal by Immersed Sankaranarayanan–Ramasamy (ISR) method for optoelectronic applications

Abstract

The high-quality and large-size semi-organic piperazinium tetrachlorozincate monohydrate (PTCZM) single crystal was grown by a novel Immersed Sankaranarayanan–Ramasamy (ISR) method. The length of the ISR crystal is 12 cm, and the diameter of the crystal is 1.5 cm. The ISR-method-grown PTCZM crystal is reported for the first time in the literature. The ampoule was specially designed for the growth of good-quality and bulk-size unidirectional single crystal by slow cooling condition. The unwanted temperature gradient developed in the solution in SR method was completely avoided; hence, the formation of secondary nucleation is avoided. This ISR method has similar growth process, optimization parameters and the quality of crystal is better than the SEST and SR method. Growth direction parallel to the gravity can be easily achieved; hence, slanted growth could be avoided within the ampoule and also linear transportation of embryos from solution to crystal–solution interface is achieved. The title crystal was subjected to various characterizations. The structural analysis (crystal system and cell parameter) of the grown PTCZM crystal was examined by single-crystal XRD and it exposed that the PTCZM crystal has a crystal monoclinic system and space group P121/c. Using powder X-ray diffraction (PXRD) analysis, miller index and (h k l) planes were identified. The crystalline perfection of the ISR-method-grown crystal was examined using a high-resolution X-ray diffraction (HRXRD). The presence of different vibrational assignments was identified by Fourier transform infrared spectrophotometer analysis. The optical behavior of the grown crystal was measured with a UV–Vis NIR spectrophotometer. The negative photoconductivity nature of the PTCZM crystal was measured by photoconductivity analysis. The luminescence properties of the PTCZM crystal were investigated using photoluminescence analysis. The optical homogeneity of the single crystal was examined across different portions (top, middle, and bottom). The thermal stability of PTCZM crystal was found to be upto 70 °C and the different levels of decomposition temperatures were analyzed using thermogravimetric differential thermal analysis (TG–DTA). The mechanical stability of the grown PTCZM crystal was studied using Vickers microhardness measurement. Furthermore, dielectric and piezoelectric analyses were employed to assess the electrical characteristics of each segment of the grown crystal. The laser damage threshold value of the ISR-method-grown PTCZM crystal was determined using a pulsed Nd:YAG laser (532 nm). The third-order nonlinear susceptibility was measured and analyzed by Z-scan technique using (He–Ne) laser of wavelength 632.8 nm. As presented in this paper, the newly introduced ISR method for crystal growth suggests that crystals grown using the ISR method are suitable for high-performance optical device applications.