High-performance AZO transparent electrodes with enhanced mechanical flexibility and conductivity through imbedding of Ag NWs

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jinke Bai, Chongdu Yu, Kangchun Tan, Shuai Shi, Lijun Song, Shihui Yu
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Abstract

The mechanical flexibility and conductivity of Al-doped ZnO thin films on flexible substrates are improved effectively via imbedding of silver nanowires (Ag NWs). The corresponding optical and electrical properties (before imbedding Ag NWs: 47.9 Ω/sq. at 85.1%, after imbedding Ag NWs: 14.7 Ω/sq. at 84.9%) indicate that the imbedding of Ag NW enables the preservation of high transparency and improvement of conductivity of AZO thin films. The resistance of AZO-Ag NW composites remains nearly constant after 2000 bending cycles at curvature radius of 8.0 mm, while the resistance of AZO thin films is increased significantly, which indicates the mechanical flexibility is enhanced by the Ag NWs. In addition, the resistance of the AZO-Ag NW composites is almost unchanged after experiencing strong oxidation and high corrosion tests. These results indicate that embedding of Ag NWs is a promising solution to solve critical problems of high resistance and brittle AZO thin films.

通过嵌入 Ag NWs 提高机械柔韧性和导电性的高性能 AZO 透明电极
通过嵌入银纳米线(Ag NWs),在柔性基底上的铝掺杂氧化锌薄膜的机械柔韧性和导电性得到了有效改善。相应的光学和电学特性(银纳米线嵌入前:47.9 Ω/sq:47.9 Ω/sq.(85.1%),银纳米线沉积后为 14.7 Ω/sq.(85.1%):14.7 Ω/sq.,导电率为 84.9%)表明,添加 Ag NW 能够保持 AZO 薄膜的高透明度并提高其导电率。在曲率半径为 8.0 mm 的条件下,AZO-Ag NW 复合材料经过 2000 次弯曲后,其电阻几乎保持不变,而 AZO 薄膜的电阻则显著增加,这表明 Ag NW 增强了机械柔韧性。此外,AZO-Ag NW 复合材料在经历强氧化和高腐蚀测试后,其电阻几乎没有变化。这些结果表明,嵌入 Ag NWs 是解决高电阻和脆性 AZO 薄膜关键问题的一种可行方案。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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