{"title":"Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb2O3)","authors":"Alok Ranjan*, Lunjie Zeng and Eva Olsson*, ","doi":"10.1021/acsaelm.4c0181810.1021/acsaelm.4c01818","DOIUrl":null,"url":null,"abstract":"<p >High-κ gate dielectrics compatible with two-dimensional (2D) materials are crucial for advanced electronics, and Sb<sub>2</sub>O<sub>3</sub> (antimony trioxide) shows significant potential. Here, we show that the soft breakdown induces oxygen vacancies and migration of copper into Sb<sub>2</sub>O<sub>3</sub>. Hard breakdown, driven by joule heating, gives rise to a substantial temperature increase, leading to morphological transformations and oxygen redistribution. In situ transmission electron microscopy (in situ TEM) measurements correlated with device performance show the formation of nanoconducting filaments due to the increased concentration of oxygen vacancies and copper migration in connection with the soft breakdown. The hard breakdown is associated with the formation of antimony-enriched nanocrystals. These findings offer critical insights into the suitability of Sb<sub>2</sub>O<sub>3</sub> as a high-κ gate dielectric.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8540–8548 8540–8548"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01818","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c01818","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
High-κ gate dielectrics compatible with two-dimensional (2D) materials are crucial for advanced electronics, and Sb2O3 (antimony trioxide) shows significant potential. Here, we show that the soft breakdown induces oxygen vacancies and migration of copper into Sb2O3. Hard breakdown, driven by joule heating, gives rise to a substantial temperature increase, leading to morphological transformations and oxygen redistribution. In situ transmission electron microscopy (in situ TEM) measurements correlated with device performance show the formation of nanoconducting filaments due to the increased concentration of oxygen vacancies and copper migration in connection with the soft breakdown. The hard breakdown is associated with the formation of antimony-enriched nanocrystals. These findings offer critical insights into the suitability of Sb2O3 as a high-κ gate dielectric.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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