Threshold voltage instability of SiC MOSFETs under very-high temperature and wide gate bias

IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao
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Abstract

Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very-high temperature range (150°C to 275°C). The degradation mechanism of gate oxide under coupling of different electrical and thermal stress is revealed. When the device is subjected to +VGS, the relationship between VTH shift and temperature is not monotonic and there is a temperature turning point. This is mainly related to the capture/release and generation of electron traps. However, the VTH shift increases sharply and gate oxide breakdown for the device bias at +35 V, which is related to Fowler–Nordheim (F–N) tunnelling effect. For a large −VGS, the VTH shift is very small. Moreover, when the negative VGS decreases, the VTH shift is positively correlated with temperature, which may result from the activation and charge exchange of hole traps. However, the influence of moving ions changes the temperature dependence of VTH shift for the device bias at −30 V. Finally, the devices of different manufacturers are studied and similar change patterns are found. This finding provides guidance for the further application of SiC MOSFETs under high temperatures and different voltages.

Abstract Image

超高温和宽栅偏压条件下 SiC MOSFET 的阈值电压不稳定性
阈值电压 (VTH) 不稳定性会影响碳化硅 (SiC) MOSFET 的可靠性。本文研究了在宽 VGS 和超高温(150°C 至 275°C)范围内,栅极偏压(VGS)和高温对 VTH 不稳定性的影响。揭示了栅极氧化物在不同电应力和热应力耦合下的降解机制。当器件受到 +VGS 作用时,VTH 漂移与温度之间的关系并不是单调的,而是存在一个温度转折点。这主要与电子陷阱的捕获/释放和产生有关。然而,当器件偏压为 +35 V 时,VTH 漂移急剧增加,栅极氧化物击穿,这与 Fowler-Nordheim (F-N) 隧道效应有关。对于较大的 -VGS,VTH 漂移非常小。此外,当负 VGS 减小时,VTH 漂移与温度呈正相关,这可能是空穴陷阱的激活和电荷交换造成的。然而,在器件偏压为 -30 V 时,移动离子的影响改变了 VTH 漂移的温度依赖性。最后,对不同制造商的器件进行了研究,发现了类似的变化模式。这一发现为碳化硅 MOSFET 在高温和不同电压下的进一步应用提供了指导。
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来源期刊
IET Power Electronics
IET Power Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
5.50
自引率
10.00%
发文量
195
审稿时长
5.1 months
期刊介绍: IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes: Applications: Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances. Technologies: Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies. Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials. Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems. Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques. Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material. Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest. Special Issues. Current Call for papers: Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf
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