{"title":"Threshold voltage instability of SiC MOSFETs under very-high temperature and wide gate bias","authors":"Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao","doi":"10.1049/pel2.12786","DOIUrl":null,"url":null,"abstract":"<p>Threshold voltage (<i>V</i><sub>TH</sub>) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (<i>V</i><sub>GS</sub>) and high temperature on <i>V</i><sub>TH</sub> instability is investigated under wide <i>V</i><sub>GS</sub> and very-high temperature range (150°C to 275°C). The degradation mechanism of gate oxide under coupling of different electrical and thermal stress is revealed. When the device is subjected to +<i>V</i><sub>GS,</sub> the relationship between <i>V</i><sub>TH</sub> shift and temperature is not monotonic and there is a temperature turning point. This is mainly related to the capture/release and generation of electron traps. However, the <i>V</i><sub>TH</sub> shift increases sharply and gate oxide breakdown for the device bias at +35 V, which is related to Fowler–Nordheim (F–N) tunnelling effect. For a large −<i>V</i><sub>GS</sub>, the <i>V</i><sub>TH</sub> shift is very small. Moreover, when the negative <i>V</i><sub>GS</sub> decreases, the <i>V</i><sub>TH</sub> shift is positively correlated with temperature, which may result from the activation and charge exchange of hole traps. However, the influence of moving ions changes the temperature dependence of <i>V</i><sub>TH</sub> shift for the device bias at −30 V. Finally, the devices of different manufacturers are studied and similar change patterns are found. This finding provides guidance for the further application of SiC MOSFETs under high temperatures and different voltages.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"17 15","pages":"2393-2404"},"PeriodicalIF":1.7000,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12786","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/pel2.12786","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very-high temperature range (150°C to 275°C). The degradation mechanism of gate oxide under coupling of different electrical and thermal stress is revealed. When the device is subjected to +VGS, the relationship between VTH shift and temperature is not monotonic and there is a temperature turning point. This is mainly related to the capture/release and generation of electron traps. However, the VTH shift increases sharply and gate oxide breakdown for the device bias at +35 V, which is related to Fowler–Nordheim (F–N) tunnelling effect. For a large −VGS, the VTH shift is very small. Moreover, when the negative VGS decreases, the VTH shift is positively correlated with temperature, which may result from the activation and charge exchange of hole traps. However, the influence of moving ions changes the temperature dependence of VTH shift for the device bias at −30 V. Finally, the devices of different manufacturers are studied and similar change patterns are found. This finding provides guidance for the further application of SiC MOSFETs under high temperatures and different voltages.
期刊介绍:
IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes:
Applications:
Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances.
Technologies:
Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies.
Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials.
Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems.
Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques.
Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material.
Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest.
Special Issues. Current Call for papers:
Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf