In-depth conduction mechanism analysis of programmable memristor and its biosynaptic applications

Abstract

Flexible electronic devices offer a broad spectrum of potential applications, promising unprecedented convenience and opportunities in both human life and work. In particular, the flexible memristors have many superior performance characteristics, including high endurance, flexibility, and low power consumption, making them perfect for the rapidly growing fields of wearable devices, flexible displays, and other cutting-edge technologies. In this work, a flexible HfO_x-based memristor with good stability and recyclability was demonstrated. By exploiting the temperature dependence characteristic of the electrical properties, it was identified the central role of oxygen vacancies in a classical conductive filament. Further, the analog resistive switching behavior and synapse-like functional properties can be successfully achieved through pulse programming, indicating that it can be applied to the construction of artificial synapses. Therefore, the as-proposed flexible memristor is expected to emerge as a key candidate for the development of functional devices for both wearable systems and neuromorphic computing.