Miniaturized millimeter-wave dual-band band-pass on-chip filter in 0.13-μm SiGe BiCMOS

IF 3 3区计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Aeu-International Journal of Electronics and Communications Pub Date : 2024-11-16 DOI:10.1016/j.aeue.2024.155591

Xianhu Luo , Xu Cheng , Jiang Jiang , Weikang Zhou , Jiangan Han , Binbin Cheng , Xianjin Deng , Xilong Lu , Liguo Zhou

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引用次数: 0

Abstract

A design approach for a compact on-chip millimeter wave (mm-wave) dual-passband filter employing hybrid electromagnetic coupling (HEMC) and tunable transmission zeros (TZs) is presented in a 0.13-μm SiGe BiCMOS technology. A dual-mode double-layer series folded resonator with a quarter wavelength has been designed, which reduces the chip area by approximately 40 % compared to a single-mode planar quarter resonator. Additionally, TZs controlled by HEMC are introduced to enhance filter selectivity. A dual-passband filter operating in the W/F-band was realized in the 0.13-μm SiGe (Bi)-CMOS technology, with corresponding fractional bandwidths (FBW) of 15.1 % and 16.2 %, at 94/120 GHz respectively, and the average roll off rate of the filter is greater than 2 dB/GHz. The measured results demonstrate insertion losses below 5.7 dB in both passbands and the compact chip dimension is 626 × 813 μm². When this chip can be placed after the low-noise amplifier in a receiver, the insertion loss has little negative impact on system performance. To our knowledge, this is the first time a 94/120 GHz dual-band BPF in Bi-CMOS technology has been implemented in such a small size. This study presents an alternative design methodology for miniaturizing and streamlining the structure of millimeter-wave dual-passband filters in the SiGe process.

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采用 0.13μm SiGe BiCMOS 的微型毫米波双频带通片载滤波器

本文介绍了一种采用混合电磁耦合（HEMC）和可调谐传输零点（TZs）的紧凑型片上毫米波（mm-wave）双通道滤波器的设计方法，采用的是 0.13μm 硅锗（SiGe）BiCMOS 技术。设计出的双模双层串联折叠谐振器具有四分之一波长，与单模平面四分之一谐振器相比，芯片面积减少了约 40%。此外，还引入了由 HEMC 控制的 TZ，以提高滤波器的选择性。在 0.13μm SiGe（Bi）-CMOS 技术中实现了工作在 W/F 波段的双通带滤波器，在 94/120 GHz 频率下，相应的分数带宽（FBW）分别为 15.1 % 和 16.2 %，滤波器的平均衰减率大于 2 dB/GHz。测量结果表明，两个通带的插入损耗均低于 5.7 dB，芯片尺寸为 626 × 813 μm2。当该芯片放置在接收器的低噪声放大器之后时，插入损耗对系统性能的负面影响很小。据我们所知，这是首次采用 Bi-CMOS 技术实现如此小尺寸的 94/120 GHz 双频 BPF。本研究提出了一种替代设计方法，可在 SiGe 工艺中实现毫米波双通道滤波器的小型化和结构精简。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Aeu-International Journal of Electronics and Communications 工程技术-电信学

CiteScore

6.90

自引率

18.80%

发文量

292

审稿时长

4.9 months

期刊介绍： AEÜ is an international scientific journal which publishes both original works and invited tutorials. The journal''s scope covers all aspects of theory and design of circuits, systems and devices for electronics, signal processing, and communication, including: signal and system theory, digital signal processing network theory and circuit design information theory, communication theory and techniques, modulation, source and channel coding switching theory and techniques, communication protocols optical communications microwave theory and techniques, radar, sonar antennas, wave propagation AEÜ publishes full papers and letters with very short turn around time but a high standard review process. Review cycles are typically finished within twelve weeks by application of modern electronic communication facilities.