Numerical simulation of flow and mass transport in KDP crystal growth using solution alternate jetting method

Abstract

In response to the limitations of some previous crystal growth method, which cannot generate ‘back-and-forth shear flow’ in rotating-crystal method and the partial realization of ‘back-and-forth shear flow’ in the crystal two-dimensional and three-dimensional motion methods, a novel KDP crystal growth method, named solution alternate jetting method, was proposed. This method can achieve complete coverage of crystal faces with ‘back-and-forth shear flow’. Numerical simulation results indicate that solution alternate jetting method outperforms rotating-crystal growth method and crystal two-dimensional and three-dimensional motion methods in terms of time-averaged supersaturation and its standard deviation on crystal faces. The jet velocity has a significant impact on the magnitude and distribution of time-averaged supersaturation on crystal faces. Other operating conditions, including the vertical distances from the nozzle outlet to the crystal surface, alternate jetting cycle, nozzle spray angle, and special motion velocity, have a relatively minor impact. Crystals grown with less than 50% ‘back-and-forth shear flow’ in the crystal two-dimensional and three-dimensional motion methods had significantly improved quality compared to rotating-crystal growth method. Therefore, the solution alternate jetting method, capable of achieving the ideal ‘back-and-forth shear flow’, undoubtedly holds promising application prospects.