Frequency and voltage dependent of electrical and dielectric properties of Ag/GO doped NiO/p-Si/Al MOS structures under darkness and light

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Halil ÖZERLİ
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Abstract

At studying, we searched the frequency and voltage dependency of the electrical and dielectric traits of a nano-made NiO-contributed GO thin film enlarged on a p-type silicon substrate using sol-gel technique. The electrical and dielectric features of Ag/GO-NiO/p-Si were investigated by capacitance–voltage (C–V) and conductance–voltage (G/ ω–V) indications in the frequency interval of 10 kHz–1000 kHz below dark and illumination at ambient temperature. While the capacitance and series resistance (Rs) values decrease with increment of frequency and increment trend in conductance was observed with the increasement of frequency. These decrement/increment trend observed at greater frequencies are attributed to existence of interface state densities. After, the frequency dependence of dielectric constant (εʼ), dielectric loss (εʼʼ), loss tangent (tanδ), ac electrical conductivity (σac) and complex impedance (Z∗) of Ag/GO-NiO/p-Si structures were investigated in the frequency by means of the capacitance–voltage (C–V) and conductance-voltage (G/w-V) indications. The experimental findings showed that εʼ, εʼʼ and σac were strongly frequency dependent.
掺杂 Ag/GO 的 NiO/p-Si/Al MOS 结构在黑暗和光照下的电气和介电特性与频率和电压有关
在这项研究中,我们利用溶胶-凝胶技术研究了在 p 型硅衬底上放大的纳米氧化镍-GO 薄膜的电学和介电特性的频率和电压依赖性。通过电容-电压(C-V)和电导-电压(G/ ω-V)指标,研究了 Ag/GO-NiO/p-Si 的电学和介电特性。电容和串联电阻(Rs)值随着频率的增加而降低,电导则随着频率的增加而呈上升趋势。在更高频率下观察到的这些减小/增大趋势归因于界面态密度的存在。随后,通过电容-电压(C-V)和电导-电压(G/w-V)指标,研究了 Ag/GO-NiO/p-Si 结构的介电常数(εʼ)、介质损耗(εʼ)、损耗正切(tanδ)、交流导电率(σac)和复阻抗(Z∗)在频率上的频率依赖性。实验结果表明,εʼ、εʼ和σac 与频率密切相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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