Research on controllable processing technology of microsphere cavity inside silicon substrates utilizing thermoelectric coupling effect

Abstract

Micro cavity structures are extensively utilized in semiconductor micro- and nanosensor devices, especially spherical microcavity, whose high Q value not only significantly improves the sensitivity of the sensors, but also enhances their reliability in complex environments. The integration of this structure not only optimizes the performance of the sensor, but also provides the possibility for high-precision detection. In this study, a thermoelectric coupling method for controllable migration of microsphere cavity inside silicon materials is proposed in order to achieve stable formation of the internal microsphere cavity structure. The directional migration mechanism of atoms on the surface of microsphere cavities in silicon substrates under an electric field is explored using a phase field model. The model indicates that changes in the total free energy density induce a solid-gas phase transition on the surface of the microsphere cavity. It is shown that the migration velocity of the microsphere cavity increases proportionally with the electric field strength, and the migration distance increases by approximately 9 % for every 10 % increase in electric field strength. The migration direction aligns with the direction of the electric field. Simulation results validate the theoretical accuracy, the feasibility of controllable migration by thermoelectric coupling effect in conductive materials through experimental studies. This study provides novel methods and insights for fabricating high-quality spherical cavity in silicon materials and preparing highly sensitive micro- and nanosensor devices.