Slow-Scan anodization of copper in alkaline Solution: Synthesis, performance Evolution, and theoretical analysis of Cu(OH)2 nanowires for High-Performance supercapacitors

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mosbah Daamouche , Djamal Eddine Guitoume , Halla Lahmar , Sofiane Bouheroum , Mokhtar Boudissa , Hichem Farh
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Abstract

In this work, a binder-free Cu/Cu(OH)2 NwBs electrode was fabricated using a simple potentiodynamic anodization method. The effect of anodization scan rates of 3, 0.5, and 0.1 mV/s on the structural, morphological, and supercapacitive properties was thoroughly investigated. An areal capacitance of 22.5 mF/cm2 at 1 mA/cm2 was achieved at scan rate of anodization 0.1 mV/s. The Cu/Cu(OH)2 electrode demonstrates excellent retention cyclic stability of 120 % after 10,000 cycles. Post-cycling analysis revealed a phase transformation from Cu(OH)2 to CuO, accompanied by significant morphological changes. A theoretical model based on Fick’s law was employed, which aligned well with the experimental data. The diffusion coefficient values were calculated from charge/discharge data, and the results indicated that higher diffusion coefficients corresponded to higher specific capacitance, demonstrating improved supercapacitor performance.

Abstract Image

铜在碱性溶液中的慢扫描阳极化:用于高性能超级电容器的 Cu(OH)2 纳米线的合成、性能演化和理论分析
本研究采用简单的电位阳极化方法制备了无粘结剂的 Cu/Cu(OH)2 NwBs 电极。研究人员深入研究了 3、0.5 和 0.1 mV/s 的阳极氧化扫描速率对电极结构、形态和超级电容特性的影响。阳极氧化扫描速率为 0.1 mV/s时,在 1 mA/cm2 的条件下,电容值为 22.5 mF/cm2。Cu/Cu(OH)2 电极在 10,000 次循环后保持了 120% 的良好循环稳定性。循环后分析表明,Cu(OH)2 向 CuO 的相变伴随着显著的形态变化。我们采用了基于菲克定律的理论模型,该模型与实验数据十分吻合。根据充放电数据计算了扩散系数值,结果表明,扩散系数越高,比电容越大,这表明超级电容器的性能得到了改善。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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