Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

IF 1.5 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment Pub Date : 2024-11-12 DOI:10.1016/j.nima.2024.170034

Gianluca Aglieri Rinella , Luca Aglietta , Matias Antonelli , Francesco Barile , Franco Benotto , Stefania Maria Beolè , Elena Botta , Giuseppe Eugenio Bruno , Francesca Carnesecchi , Domenico Colella , Angelo Colelli , Giacomo Contin , Giuseppe De Robertis , Floarea Dumitrache , Domenico Elia , Chiara Ferrero , Martin Fransen , Alex Kluge , Shyam Kumar , Corentin Lemoine , Andrea Turcato

{"title":"Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process","authors":"Gianluca Aglieri Rinella , Luca Aglietta , Matias Antonelli , Francesco Barile , Franco Benotto , Stefania Maria Beolè , Elena Botta , Giuseppe Eugenio Bruno , Francesca Carnesecchi , Domenico Colella , Angelo Colelli , Giacomo Contin , Giuseppe De Robertis , Floarea Dumitrache , Domenico Elia , Chiara Ferrero , Martin Fransen , Alex Kluge , Shyam Kumar , Corentin Lemoine , Andrea Turcato","doi":"10.1016/j.nima.2024.170034","DOIUrl":null,"url":null,"abstract":"<div><div>In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a <span><math><mrow><mn>120</mn><mtext>GeV</mtext><mo>/</mo><mi>c</mi></mrow></math></span> positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63ps with a detection efficiency exceeding 99% and a spatial resolution of 2μm, highlighting the potential of TPSCo 65 nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.</div></div>","PeriodicalId":19359,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment","volume":"1070 ","pages":"Article 170034"},"PeriodicalIF":1.5000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168900224009604","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}

引用次数: 0

Abstract

In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a

120 GeV / c

positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 μm, highlighting the potential of TPSCo 65 nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.

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在 65 纳米 CMOS 成像工艺中采用片内运算放大器的模拟像素测试结构的时间性能

在欧洲核子研究中心 (CERN) 有关单片式传感器的 EP R&D 和 ALICE ITS3 升级项目中，Tower Partners Semiconductor Co (TPSCo) 65 纳米工艺已通过高能物理应用认证，并被 ALICE ITS3 升级项目采用。模拟像素测试结构（APTS）的特点是为一个四乘四像素的小矩阵提供基于运算放大器的快速单位像素缓冲，并设计了一个具有小收集电极和非常不均匀电场的传感器，以便详细鉴定该技术的像素性能。在 120GeV/c 正强子束的作用下，对该芯片的几种不同像素设计的变体进行了表征。结果表明，性能最好的 APTS-OA 原型变体的时间分辨率达到了 63 ps，探测效率超过 99%，空间分辨率达到 2 μm，这凸显了 TPSCo 65 nm CMOS 成像技术在高能物理和其他需要精确时间测量、高探测效率和出色空间分辨率的领域的应用潜力。

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来源期刊

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment 物理-光谱学

CiteScore

3.20

自引率

21.40%

发文量

787

审稿时长

1 months

期刊介绍： Section A of Nuclear Instruments and Methods in Physics Research publishes papers on design, manufacturing and performance of scientific instruments with an emphasis on large scale facilities. This includes the development of particle accelerators, ion sources, beam transport systems and target arrangements as well as the use of secondary phenomena such as synchrotron radiation and free electron lasers. It also includes all types of instrumentation for the detection and spectrometry of radiations from high energy processes and nuclear decays, as well as instrumentation for experiments at nuclear reactors. Specialized electronics for nuclear and other types of spectrometry as well as computerization of measurements and control systems in this area also find their place in the A section. Theoretical as well as experimental papers are accepted.