Shrink effects on nanoscale MOS capacitor in visible and NIR spectral Ranges

IF 4.4 2区物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Results in Physics Pub Date : 2024-11-17 DOI:10.1016/j.rinp.2024.108044

Jeremy Belhassen , Avraham Chelly , Avi Karsenty

引用次数: 0

Abstract

This research explores the influence of visible and near-infrared light on the electrical characteristics of nanoscale MOS capacitors, examining the effects of light intensity and spectral composition. Photon absorption within the device stimulates an enhancement of the inversion electron layer. A spectral analysis encompassing the ultraviolet to near-infrared range (400–1100 nm) is presented. Research on nanoscale devices of this nature can contribute to a profound understanding of fundamental light-matter interactions at the atomic and molecular scale. This knowledge can pave the way for the development of novel optoelectronic coupled devices, which combine light trigger and electronic functionalities. These devices, when integrated in Photonics Integrated Circuits (PICs), could have applications in areas such as solar cells, photodetectors, and future ultrasmall electronic components.

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可见光和近红外光谱范围内纳米级 MOS 电容器的收缩效应

这项研究探讨了可见光和近红外线对纳米级 MOS 电容器电气特性的影响，研究了光强度和光谱成分的影响。器件内的光子吸收会刺激反转电子层的增强。本文介绍了从紫外线到近红外范围（400-1100 纳米）的光谱分析。对这种性质的纳米级器件进行研究，有助于深入了解原子和分子尺度上基本的光物质相互作用。这些知识可为开发新型光电耦合器件铺平道路，这些器件结合了光触发和电子功能。这些器件集成到光子集成电路（PIC）中后，可应用于太阳能电池、光电探测器和未来的超小型电子元件等领域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Results in Physics MATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY

CiteScore

8.70

自引率

9.40%

发文量

754

审稿时长

50 days

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