A road for macroporous silicon stabilization by ultrathin ALD TiO2 coating†

IF 5.2 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Bachar Al Chimali, Irene Carrasco, Thomas Defforge, Romain Dailleau, Lisa Monnier, Kaushik Baishya, Jan M. Macak, Gael Gautier and Brice Le Borgne
{"title":"A road for macroporous silicon stabilization by ultrathin ALD TiO2 coating†","authors":"Bachar Al Chimali, Irene Carrasco, Thomas Defforge, Romain Dailleau, Lisa Monnier, Kaushik Baishya, Jan M. Macak, Gael Gautier and Brice Le Borgne","doi":"10.1039/D4MA00654B","DOIUrl":null,"url":null,"abstract":"<p >Macroporous silicon films have great potential for a plethora of applications in optoelectronics and microelectronics. However, such layers are too electrically and chemically unstable to be used in fuel cells, supercapacitors or any devices requiring the use of an electrolyte. This is due to their high surface-to-volume ratio, which makes them prone to chemical reactions, such as photo-oxidation, especially in aqueous media. In this work, we investigated how to exploit the capabilities of macroporous silicon while avoiding its oxidation. To do so, we explored the influence of ultrathin TiO<small><sub>2</sub></small> films by atomic layer deposition (ALD) onto the walls of silicon macropores, created by electrochemical etching from n-type wafers. Using microscopy and optical analysis, we demonstrate the achievability of ALD coating on macroporous silicon, as well as the stability of these films against oxidation. In particular, we show that 5 ALD cycles that correspond to less than 1 nm thin coating are sufficient to passivate the silicon surface. The coated and uncoated layers were analyzed and compared before and after exposure to water and sunlight. The monitoring of the Si–O–Si band area evolution over 29 days gave no evidence of photo-corrosion. In addition, the wettability of the samples did not change after functionalization. Finally, to investigate the oxidation prevention for photocatalytic applications, we showed that methylene blue degradation rates were significantly increased (by 50% on average) for 10 nm TiO<small><sub>2</sub></small> ALD-coated porous silicon samples when compared to natural degradation. Interestingly, layers thinner than 1 nm also showed enhanced catalytic kinetics for short times (<em>t</em> &lt; 40 min).</p>","PeriodicalId":18242,"journal":{"name":"Materials Advances","volume":" 23","pages":" 9270-9278"},"PeriodicalIF":5.2000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/ma/d4ma00654b?page=search","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Advances","FirstCategoryId":"1085","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/ma/d4ma00654b","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Macroporous silicon films have great potential for a plethora of applications in optoelectronics and microelectronics. However, such layers are too electrically and chemically unstable to be used in fuel cells, supercapacitors or any devices requiring the use of an electrolyte. This is due to their high surface-to-volume ratio, which makes them prone to chemical reactions, such as photo-oxidation, especially in aqueous media. In this work, we investigated how to exploit the capabilities of macroporous silicon while avoiding its oxidation. To do so, we explored the influence of ultrathin TiO2 films by atomic layer deposition (ALD) onto the walls of silicon macropores, created by electrochemical etching from n-type wafers. Using microscopy and optical analysis, we demonstrate the achievability of ALD coating on macroporous silicon, as well as the stability of these films against oxidation. In particular, we show that 5 ALD cycles that correspond to less than 1 nm thin coating are sufficient to passivate the silicon surface. The coated and uncoated layers were analyzed and compared before and after exposure to water and sunlight. The monitoring of the Si–O–Si band area evolution over 29 days gave no evidence of photo-corrosion. In addition, the wettability of the samples did not change after functionalization. Finally, to investigate the oxidation prevention for photocatalytic applications, we showed that methylene blue degradation rates were significantly increased (by 50% on average) for 10 nm TiO2 ALD-coated porous silicon samples when compared to natural degradation. Interestingly, layers thinner than 1 nm also showed enhanced catalytic kinetics for short times (t < 40 min).

Abstract Image

利用超薄 ALD TiO2 涂层稳定大孔硅的途径†...
大孔硅薄膜在光电子学和微电子学的大量应用中具有巨大潜力。然而,这种薄膜在电学和化学性质上都太不稳定,不能用于燃料电池、超级电容器或任何需要使用电解液的设备。这是因为它们的表面体积比很高,容易发生光氧化等化学反应,尤其是在水介质中。在这项工作中,我们研究了如何利用大孔硅的功能,同时避免其氧化。为此,我们通过原子层沉积 (ALD) 技术,探索了超薄 TiO2 薄膜对硅大孔壁的影响。通过显微镜和光学分析,我们证明了在大孔硅上进行原子层沉积镀膜的可行性,以及这些薄膜抗氧化的稳定性。特别是,我们证明了 5 个 ALD 周期(相当于不到 1 nm 薄涂层)足以使硅表面钝化。我们对涂覆层和未涂覆层进行了分析,并在暴露于水和阳光前后进行了比较。通过对 29 天内硅-氧-硅带面积变化的监测,没有发现光腐蚀的迹象。此外,样品的润湿性在功能化后也没有发生变化。最后,为了研究光催化应用中的氧化预防问题,我们发现与自然降解相比,10 nm TiO2 ALD 涂层多孔硅样品的亚甲基蓝降解率显著提高(平均提高 50%)。有趣的是,厚度小于 1 纳米的层在短时间内(t < 40 分钟)也显示出更强的催化动力学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Advances
Materials Advances MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.60
自引率
2.00%
发文量
665
审稿时长
5 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信