Tailoring the structural and optical properties of sulphur doped g-C3N4 nanostructures and maximizing their photocatalytic performance via controlling carbon content
IF 3.3 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Abdullah S. Alshammari, Mansour Mohamed, Mohamed Bouzidi, Fahad Abdulaziz
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引用次数: 0
Abstract
Carbon based materials are highly promising materials for environmental applications. In the current study, sulphur doped graphite like carbon nitride (S-g-C3N4) samples were prepared through thermal polymerization of thiourea at different conditions. The carbon content in the prepared samples was controlled by varying the calcination temperature and calcination time and its effect on the properties of the samples was investigated. The XRD studies confirmed the formation of g-C3N4 while the SEM investigations were performed to monitor the morphology transformation as a function of the preparation conditions. Changing the preparation temperature was found to strongly impact the carbon content in the g-C3N4 nanostructures and consequently their morphological and optical properties including their band gap and photoluminescence characteristics. Additionally, varying the calcination time was found to play a role in modifying the properties of the samples but with slightly less effect than that of the calcination temperature. These parameters were utilized to enhance the photocatalytic performance for water treatment applications. The findings of the study show that engineering the composition of S doped g-C3N4 samples by combining the effects of various preparation conditions could be effectively utilized to enhance the properties of g-C3N4 and its performance in many vital applications.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.