Electrical and thermoelectrical conductivity of sprayed MgxCo3-xO4 thin films

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
L. Soussi, C. Louardi, T. Garmim, N. Benaissa, M. Bouzidi, O. Zahot, A. El,  Bachiri, A. Louardi, Z. ElJouad, H. Erguig
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Abstract

The effect of Mg substitution on the structural, morphological and electrical properties of sprayed magnesium cobalt oxide (MgxCo3-xO4) thin films (0 ≤ x ≤ 1) have been studed using X-ray diffraction (XRD), scanning electron microscopy, compositional analysis with EDS technique and four probe method for the electric conductivity measurements. XRD evaluation exhibits that MgxCo3-xO4 thin films are polycrystalline with spinel cubic structure. The EDS study confirms the presence of Mg and Co in the substituted films with the same concentrations as in the starting solution confirming the formation of MgxCo3-xO4 thin films. The effect of temperature on the dc conductivity reveals that the electrical transport mechanism in MgxCo3-xO4 thin films is based on the three-dimensional Mott’s variable-range hopping model. The density of states, the hopping distance, and the hopping energy have been successfully evaluated.

Abstract Image

喷涂 MgxCo3-xO4 薄膜的电导率和热导率
利用 X 射线衍射 (XRD)、扫描电子显微镜、EDS 技术的成分分析和四探针电导率测量法,研究了镁替代物对喷涂氧化镁钴(MgxCo3-xO4)薄膜(0 ≤ x ≤ 1)的结构、形态和电学特性的影响。X 射线衍射评估表明,MgxCo3-xO4 薄膜是多晶体,具有尖晶立方结构。EDS 研究证实,替代薄膜中存在与起始溶液浓度相同的镁和钴,从而确认了 MgxCo3-xO4 薄膜的形成。温度对直流电导的影响表明,MgxCo3-xO4 薄膜中的电传输机制是基于三维莫特变程跳变模型。研究成功地评估了态密度、跳变距离和跳变能量。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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