Dielectric response, electrical conductivity and scaling behavior of LuFe0.5Cr0.5O3 perovskite

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Q. S. Fu, B. Meng, X. H. Chen, H. X. Yin, S. L. Yuan
{"title":"Dielectric response, electrical conductivity and scaling behavior of LuFe0.5Cr0.5O3 perovskite","authors":"Q. S. Fu,&nbsp;B. Meng,&nbsp;X. H. Chen,&nbsp;H. X. Yin,&nbsp;S. L. Yuan","doi":"10.1007/s10854-024-13866-w","DOIUrl":null,"url":null,"abstract":"<div><p>Polycrystalline LuFe<sub>0.5</sub>Cr<sub>0.5</sub>O<sub>3</sub> perovskite ceramic was synthesized via the solid-state reaction method. Analysis of the electrical modulus reveals a relaxation behavior that does not follow the Debye model. The impedance plots suggest that both grains and grain boundaries contribute to the electric response of the sample. At higher temperatures, an increase in conductivity is observed for both grains and grain boundaries, as demonstrated by Nyquist analysis. The comparable activation energy values of DC conduction and relaxation suggest that similar factors are accountable for both phenomena. Moreover, based on the value of the activation energy of DC conduction, it can be considered that the dominant mechanism for conduction involves thermal stimulation of the electrons from the secondary ionization of oxygen vacancies to the conduction band. Scaling behaviors of electrical modulus, impedance spectra, and electrical conductivity confirm that the relaxation behavior is independent of temperature. Furthermore, the separation of the peak frequencies in electrical modulus and impedance curves confirms the occurrence of migrating carriers at both short and long ranges. It is also evident that there is an increase in carriers with short-range mobility at elevated temperatures. In summary, oxygen vacancies assume a pivotal role in governing both electrical conduction and dielectric relaxation behaviors of the ceramic sample.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13866-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Polycrystalline LuFe0.5Cr0.5O3 perovskite ceramic was synthesized via the solid-state reaction method. Analysis of the electrical modulus reveals a relaxation behavior that does not follow the Debye model. The impedance plots suggest that both grains and grain boundaries contribute to the electric response of the sample. At higher temperatures, an increase in conductivity is observed for both grains and grain boundaries, as demonstrated by Nyquist analysis. The comparable activation energy values of DC conduction and relaxation suggest that similar factors are accountable for both phenomena. Moreover, based on the value of the activation energy of DC conduction, it can be considered that the dominant mechanism for conduction involves thermal stimulation of the electrons from the secondary ionization of oxygen vacancies to the conduction band. Scaling behaviors of electrical modulus, impedance spectra, and electrical conductivity confirm that the relaxation behavior is independent of temperature. Furthermore, the separation of the peak frequencies in electrical modulus and impedance curves confirms the occurrence of migrating carriers at both short and long ranges. It is also evident that there is an increase in carriers with short-range mobility at elevated temperatures. In summary, oxygen vacancies assume a pivotal role in governing both electrical conduction and dielectric relaxation behaviors of the ceramic sample.

Abstract Image

LuFe0.5Cr0.5O3 包晶的介电响应、电导率和缩放行为
通过固态反应方法合成了多晶 LuFe0.5Cr0.5O3 包晶体陶瓷。对电模量的分析表明,其弛豫行为并不遵循德拜模型。阻抗图表明,晶粒和晶界都对样品的电响应做出了贡献。奈奎斯特分析表明,在较高温度下,晶粒和晶界的电导率都会增加。直流传导和弛豫的活化能值相当,这表明这两种现象是由类似的因素造成的。此外,根据直流传导的活化能值,可以认为传导的主要机制涉及电子从氧空位的二次电离到传导带的热刺激。电模量、阻抗谱和电导率的缩放行为证实了弛豫行为与温度无关。此外,电模量和阻抗曲线中峰值频率的分离也证实了载流子在短距离和长距离迁移的现象。同样明显的是,在温度升高时,具有短程迁移率的载流子会增加。总之,氧空位在陶瓷样品的电导和介电弛豫行为中起着关键作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信