Hua Man, Xi Wang, Banglun Wang, Mengyang Shi, Ming Jiang, Dong Xu
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引用次数: 0
Abstract
In this work, ZnO–Bi2O3 based low-voltage varistors were prepared by co-doping of In2O3 and Ta2O5, which achieved a high nonlinear coefficient with a low breakdown voltage. By exploring the microstructure and electrical performance of the samples, it was found that the samples co-doped with In2O3 and Ta2O5 have uniform microstructure, and the threshold voltage decreased slightly while the leakage current decreased. The best performance of the varistor was obtained at 0.15 mol% Ta2O5 doping with a breakdown voltage of 184 V/mm, a nonlinear coefficient of 32.3 and a leakage current of 0.04 μA. The grain boundary resistance of the varistor increased after the co-doping of In2O3 and Ta2O5, which was conducive to improving performance stability of the sample. All varistors could be aged, but the parameter change rate of doped varistors was significantly smaller.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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