Quantum dots synthesis within ternary III-V nanowire towards light emitters in quantum photonic circuits: a review.

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Giorgos Boras, Haotian Zeng, Jae-Seong Park, Huiwen Deng, Mingchu Tang, Huiyun Liu
{"title":"Quantum dots synthesis within ternary III-V nanowire towards light emitters in quantum photonic circuits: a review.","authors":"Giorgos Boras, Haotian Zeng, Jae-Seong Park, Huiwen Deng, Mingchu Tang, Huiyun Liu","doi":"10.1088/1361-6528/ad958c","DOIUrl":null,"url":null,"abstract":"<p><p>The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ad958c","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.

在三元 III-V 纳米线中合成量子点,用于量子光子电路中的光发射器:综述。
量子点(QDs)在纳米线(NWs)中的轴向定位已成为一种可控的量子点制造方法,它所产生的结构在硅光子学领域的新型应用中具有令人兴奋的潜力。其中,III-V 族 NWQDs 因其生动的光学特性、高载流子迁移率、与硅的集成便利性和带隙可调谐性而备受关注,这些特性使其具有高度的通用性。此外,与斯特兰斯基-克拉斯塔诺夫或自组装 QDs 不同,这种结构允许确定点的位置和大小,从而提高了样品的均匀性并实现了有益的功能。在这些功能中,单光子发射因其在量子信息处理中的关键作用而备受关注。这促使人们努力将三元 III-V NWQD 非经典光发射器集成到芯片上,这对量子光子电路的商业拓展大有可为。在本综述中,我们将介绍合成三元 III-V NWQD 的最新进展,包括现有文献中的生长方法和材料平台。此外,我们还将介绍与单光子发射有关的成果,以及在量子光子电路中将 III-V NWQDs 集成为单光子源的情况,从而突显其在量子信息处理方面的巨大潜力。我们的工作展示了这一研究领域的最新进展,并宣告了三元 III-V NWQDs 在量子信息和光电应用中的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信