{"title":"A 2-GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One-Port CRLH Transmission Line","authors":"Shinichi Tanaka, Ryota Mogami, Naoki Iisaka, Kazuhiko Honjo, Ryo Ishikawa","doi":"10.1049/2024/2690713","DOIUrl":null,"url":null,"abstract":"<div>\n <p>A compact harmonic tuning network (HTN) using a composite right-/left-handed (CRLH) transmission line (TL) is introduced. The CRLH TL offers purely imaginary harmonic load impedances, as it essentially functions as a one-port circuit at the harmonic frequencies, owing to a harmonics trap filter. In comparison to conventional HTNs based on microstrip line (MSL) or hybrid MSL and CRLH TL technologies, the proposed HTN features remarkable compactness while accommodating various operating classes of amplifiers. As a proof of concept, a 2-GHz 10-W gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier (PA) was fabricated, demonstrating drain efficiency of 84.6% and power added efficiency (PAE) of 78.4%. The novel HTN is expected to find applications in PAs for transmitter systems, where high efficiency and a minimal circuit footprint are of paramount importance.</p>\n </div>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":"2024 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/2024/2690713","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iet Circuits Devices & Systems","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/2024/2690713","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A compact harmonic tuning network (HTN) using a composite right-/left-handed (CRLH) transmission line (TL) is introduced. The CRLH TL offers purely imaginary harmonic load impedances, as it essentially functions as a one-port circuit at the harmonic frequencies, owing to a harmonics trap filter. In comparison to conventional HTNs based on microstrip line (MSL) or hybrid MSL and CRLH TL technologies, the proposed HTN features remarkable compactness while accommodating various operating classes of amplifiers. As a proof of concept, a 2-GHz 10-W gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier (PA) was fabricated, demonstrating drain efficiency of 84.6% and power added efficiency (PAE) of 78.4%. The novel HTN is expected to find applications in PAs for transmitter systems, where high efficiency and a minimal circuit footprint are of paramount importance.
期刊介绍：
IET Circuits, Devices & Systems covers the following topics:
Circuit theory and design, circuit analysis and simulation, computer aided design
Filters (analogue and switched capacitor)
Circuit implementations, cells and architectures for integration including VLSI
Testability, fault tolerant design, minimisation of circuits and CAD for VLSI
Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs
Device and process characterisation, device parameter extraction schemes
Mathematics of circuits and systems theory
Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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