{"title":"Fabrication of SiC-Al2O3 Nanoceramic Doped Organic Polymer For Flexible Nanoelectronics and Optical Applications","authors":"Ahmed Hashim, Hamed Ibrahim, Aseel Hadi","doi":"10.1007/s12633-024-03172-9","DOIUrl":null,"url":null,"abstract":"<div><p>The current study goals to create of PS-SiC-Al<sub>2</sub>O<sub>3</sub> multifunctional nanocomposites films as a promising nanomaterials to exploit in futuristic nanoelectronics and optical fields. By comparing with other nanocomposites films, the PS-SiC-Al<sub>2</sub>O<sub>3</sub> films have high absorption for UV-radiation, flexible, low band gap, and inexpensive. The microstructure and optical characteristics of PS-SiC-Al<sub>2</sub>O<sub>3</sub> films were investigated. The microstructure and morphological properties included FTIR and OM. The realized results indicated that the values absorbance for PS-SiC-Al<sub>2</sub>O<sub>3</sub> films are high at NIR and UV spectrums. These results build the films of PS-SiC-Al<sub>2</sub>O<sub>3</sub> are promising for NIR sensing, UV shielding and optoelectronics approaches. The increment ratio of PS absorbance is 30.9% for λ = 320 nm and SiC-Al<sub>2</sub>O<sub>3</sub> content is 2.4 wt.%. The PS band gap is 3.8 eV and its reduced to 3.13 eV with increasing SiC-Al<sub>2</sub>O<sub>3</sub> NPs content to 2.4 wt.%.. This performance leads to make the PS-SiC-Al<sub>2</sub>O<sub>3</sub> films are welcomed in various optoelectronics and photonics fields. The optical factors: extinction coefficient; absorption coefficient; real and imaginary dielectric constants, refractive index; and optical conductivity of PS were enhanced with increasing SiC-Al<sub>2</sub>O<sub>3</sub> NPs content; these results of lead to made the PS-SiC-Al<sub>2</sub>O<sub>3</sub> films are suitable for optical fields. Finally, the achieved results confirmed that the PS-SiC-Al<sub>2</sub>O<sub>3</sub> films could be as a key for promising nanoelectronics and optical fields.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6575 - 6587"},"PeriodicalIF":2.8000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03172-9","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The current study goals to create of PS-SiC-Al2O3 multifunctional nanocomposites films as a promising nanomaterials to exploit in futuristic nanoelectronics and optical fields. By comparing with other nanocomposites films, the PS-SiC-Al2O3 films have high absorption for UV-radiation, flexible, low band gap, and inexpensive. The microstructure and optical characteristics of PS-SiC-Al2O3 films were investigated. The microstructure and morphological properties included FTIR and OM. The realized results indicated that the values absorbance for PS-SiC-Al2O3 films are high at NIR and UV spectrums. These results build the films of PS-SiC-Al2O3 are promising for NIR sensing, UV shielding and optoelectronics approaches. The increment ratio of PS absorbance is 30.9% for λ = 320 nm and SiC-Al2O3 content is 2.4 wt.%. The PS band gap is 3.8 eV and its reduced to 3.13 eV with increasing SiC-Al2O3 NPs content to 2.4 wt.%.. This performance leads to make the PS-SiC-Al2O3 films are welcomed in various optoelectronics and photonics fields. The optical factors: extinction coefficient; absorption coefficient; real and imaginary dielectric constants, refractive index; and optical conductivity of PS were enhanced with increasing SiC-Al2O3 NPs content; these results of lead to made the PS-SiC-Al2O3 films are suitable for optical fields. Finally, the achieved results confirmed that the PS-SiC-Al2O3 films could be as a key for promising nanoelectronics and optical fields.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.