Crystal structure, bandgap, photoluminescence and resistivity properties of double perovskite Cs2AgBiCl6 single crystal and its thin film†

IF 3.9 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
RSC Advances Pub Date : 2024-11-21 DOI:10.1039/D4RA06936F
Huidan Gao, Chen Wang, Huimeng Shen, Huawei Zhou and Xianxi Zhang
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引用次数: 0

Abstract

Lead-free Cs2AgBiCl6 double perovskite (Cs2AgBiCl6-DP) material, as a substitute for lead halide perovskite materials, has the advantages of environmental friendliness and high stability and has attracted much attention. However, the photoluminescence and conductive properties of Cs2AgBiCl6-DP have not been well studied. In this study, we prepared Cs2AgBiCl6-DP single crystals (SCs) by coordination–dissolution and coordination–precipitation method. Single- and powder-XRD, SEM, EDS, XPS, and EPR characterization were performed to confirm the structural characteristics of Cs2AgBiCl6-DP SCs. The Tauc diagram based on UV-visible (UV-vis) absorption spectroscopy reveals that the optical bandgap of Cs2AgBiCl6-DP SCs is extrapolated to 2.51 eV. Steady-state fluorescence spectra and time-resolved fluorescence spectra show that Cs2AgBiCl6-DP SCs has four fluorescence peaks entered at 443, 615, 650 and 723 nm and a fluorescence lifetime of about 4.16 ns. Cs2AgBiCl6/PMMA thin films were prepared by spin coating suspension (Cs2AgBiCl6 DP and PMMA in acetone solvent). The intensity of emission peak increases with the increase of light intensity at 369 nm. The intensity of emission peak located at 576 nm decreases with increasing incidence wavelength (from 369 to 454 nm) at 10 W m−2. The emission intensity remains basically unchanged under continuous illumination for 9 hours at 369 nm at 5 W m−2, which indicates that the Cs2AgBiCl6-DP thin film has good stability. In addition, the resistivity and block resistance show a negative exponential change with increasing temperature. These results provide some interesting ideas for the fields of photoluminescence and thermistors.

Abstract Image

双包晶石 Cs2AgBiCl6 单晶及其薄膜的晶体结构、带隙、光致发光和电阻率特性†。
无铅 Cs2AgBiCl6 双包晶(Cs2AgBiCl6-DP)材料作为卤化铅包晶材料的替代品,具有环保、高稳定性等优点,备受关注。然而,Cs2AgBiCl6-DP 的光致发光和导电性能尚未得到很好的研究。本研究采用配位溶解法和配位沉淀法制备了 Cs2AgBiCl6-DP 单晶(SCs)。为了证实 Cs2AgBiCl6-DP SCs 的结构特征,我们对其进行了单晶和粉末 XRD、SEM、EDS、XPS 和 EPR 表征。基于紫外可见吸收光谱的陶氏图显示,Cs2AgBiCl6-DP SCs 的光带隙推断为 2.51 eV。稳态荧光光谱和时间分辨荧光光谱显示,Cs2AgBiCl6-DP SCs 在 443、615、650 和 723 nm 处有四个荧光峰,荧光寿命约为 4.16 ns。Cs2AgBiCl6/PMMA 薄膜是通过旋涂悬浮液(丙酮溶剂中的 Cs2AgBiCl6 DP 和 PMMA)制备的。在 369 nm 处,发射峰的强度随光强的增加而增加。在 10 W m-2 下,位于 576 nm 处的发射峰强度随着入射波长(从 369 nm 到 454 nm)的增加而减小。在 5 W m-2 条件下,在 369 nm 处连续照射 9 小时,发射强度基本保持不变,这表明 Cs2AgBiCl6-DP 薄膜具有良好的稳定性。此外,电阻率和阻挡电阻随温度升高呈负指数变化。这些结果为光致发光和热敏电阻领域提供了一些有趣的思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
RSC Advances
RSC Advances chemical sciences-
CiteScore
7.50
自引率
2.60%
发文量
3116
审稿时长
1.6 months
期刊介绍: An international, peer-reviewed journal covering all of the chemical sciences, including multidisciplinary and emerging areas. RSC Advances is a gold open access journal allowing researchers free access to research articles, and offering an affordable open access publishing option for authors around the world.
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