A critical review of recent advances, prospects, and challenges of MoS2/Si heterostructure based photodetectors

Abstract

Over the last decade, the first two-dimensional transition metal dichalcogenide, MoS₂, has been extensively investigated for developing efficient photodetectors due to its tunable bandgap, strong light interaction, high carrier mobility, and large optical transparency. Recently, it has also been integrated with different dimensional materials to improve its optoelectronic behavior. Among the possible heterostructures, MoS₂/Si heterojunction-based photodetectors have grabbed huge attention from the scientific fraternity due to their strong light absorption over a broad spectrum and fast carrier transport at the heterointerface. However, none of the existing review articles have addressed the significant contribution of MoS₂/Si heterostructures in the field of photodetectors. Therefore, in this article, we are highlighting the recent advances, prospects, and challenges of MoS₂/Si heterostructure-based photodetectors for bridging the existing gap. This paper provides a comprehensive analysis of the latest advancements on MoS₂/Si heterostructures-based devices, with a specific focus on photodetectors. The carrier dynamics at the MoS₂/Si heterointerface and the strategies for improving the performance of devices for developing efficient photodetectors are also highlighted in this report. Finally, we presented a perspective on future opportunities and current challenges for designing mixed-dimensional heterostructures-based photodetectors.