Effect of disorder on anomalous Hall effect and spin Hall magnetoresistance in the ferrimagnetic film

Abstract

Ferrimagnets have attracted increasing attention in spintronics due to the possibility of easy manipulation by magnetic or electric fields. We report the anomalous Hall effect (AHE) and spin Hall magnetoresistance (SMR) in ferrimagnetic Mn_1.77Co_0.44V_0.83Al_0.96 (MCVA) films, which are sensitive to the disorder of the film. As the thickness of the film increases, the film gradually transitions from the disordered to the ordered state, resulting in the anomalous Hall resistivity (ρ_AH) changes from negative to positive. By separating their distinct the contributions to the AHE, we demonstrate that the thickness dependence originates from the competition between the skew scattering contribution and the sum of the side jump and intrinsic contributions. Moreover, under the effect of disorder, the dependence of the SMR ratio on thickness is more complex, and a critical level of disorder may lead to a sharp decrease in the SMR ratio. Our research reveals the impact of disorder on spin transport and provides a pathway for the design of ferrimagnetic Heusler alloy-based spintronic devices.