Correction to Epitaxial Growth of Large-Area Monolayers and Van der Waals Heterostructures of Transition-Metal Chalcogenides via Assisted Nucleation

IF 27.4 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Advanced Materials Pub Date : 2024-11-19 DOI:10.1002/adma.202417264

Akhil Rajan, Sebastian Buchberger, Brendan Edwards, Andela Zivanovic, Naina Kushwaha, Chiara Bigi, Yoshiko Nanao, Bruno K. Saika, Olivia R. Armitage, Peter Wahl, Pierre Couture

引用次数: 0

Abstract

Adv. Mater. 2024, 36, 2402254

DOI: 10.1002/adma.202402254

In paragraph 2 of the “Film Characterization” section, the text “Particle-induced X-ray emission (PIXE) data were collected using 2.5 MeV He⁺ beam to better characterize Ge, with a spot size of 5 µm × 5 µm.” was incorrect. This should have read: “Particle-induced X-ray emission (PIXE) data were collected using 2.5 MeV H⁺ beam to better characterize Ge, with a spot size of 5 µm × 5 µm.” PIXE analysis was done with a hydrogen beam.

We apologize for this error.

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通过辅助成核实现过渡金属卤化物大面积单层和范德华异质结构的外延生长的更正

Adv.2024, 36, 2402254DOI:10.1002/adma.202402254在 "薄膜表征 "部分的第 2 段中，"为了更好地表征 Ge，使用 2.5 MeV He+ 光束收集了粒子诱导 X 射线发射 (PIXE) 数据，光斑尺寸为 5 µm × 5 µm。应改为"使用 2.5 MeV H+ 光束收集了粒子诱导 X 射线发射 (PIXE) 数据，以更好地确定 Ge 的特征，光斑尺寸为 5 µm × 5 µm。PIXE 分析是使用氢光束进行的。我们对这一错误表示歉意。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Materials 工程技术-材料科学：综合

CiteScore

43.00

自引率

4.10%

发文量

2182

审稿时长

2 months

期刊介绍： Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.