Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices

IF 27.4 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Advanced Materials Pub Date : 2024-11-20 DOI:10.1002/adma.202410060

Yueyue He, Yin-Ying Ting, Hongrong Hu, Thomas Diemant, Yuting Dai, Jing Lin, Simon Schweidler, Gabriel Cadilha Marques, Horst Hahn, Yanjiao Ma, Torsten Brezesinski, Piotr M. Kowalski, Ben Breitung, Jasmin Aghassi-Hagmann

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Abstract

Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic transition, triggered by extraction/insertion of highly mobile Na⁺ ions upon application of an electric field. The memristor operates through a low-energy process akin to Na⁺ shuttling in Na-ion batteries rather than depending on formation/rupture of Ag filaments. Notably, it showcases promising characteristics, including non-volatility, self-compliance, and forming-free behavior, and further exhibits low operation voltage (V_SET = −0.26 V, V_RESET = 0.36 V), low power consumption (P_SET = 26 µW, P_RESET = 8.0 µW), and a high R_OFF/R_ON ratio of 10⁴. This underscores the potential of high-entropy insertion materials for developing printed memristors with distinct operation mechanisms.

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用于先进非易失性薄膜器件的印刷高熵普鲁士蓝类似物

非易失性忆阻器可根据电刺激在高阻态（HRS）和低阻态（LRS）之间动态切换，对于电子存储器、神经形态计算和人工智能至关重要。高熵普鲁士蓝类似物（HE-PBAs）具有成分多样、结构完整和良好的离子导电性等特点，是很有前途的插入式电池材料。这项研究提出了一种基于 HE-PBA 的非易失性双极记忆晶体管。该器件采用喷墨打印和微绘图技术制造，其特征是在 Ag 和 ITO 电极之间夹有一层 HE-PBA 活性层。对 Ag/HE-PBA/ITO 器件的传导机制进行了系统研究。结果表明，HRS 和 LRS 之间的转换是由绝缘-金属转换驱动的，在施加电场时，高流动性 Na+ 离子的萃取/插入触发了这一转换。这种忆阻器是通过一种类似于 Na 离子电池中 Na+ 穿梭的低能耗过程来工作的，而不是依赖于银丝的形成/断裂。值得注意的是，它展示了良好的特性，包括无挥发性、自顺应性和无成型行为，并进一步表现出低工作电压（VSET = -0.26 V，VRESET = 0.36 V）、低功耗（PSET = 26 µW，PRESET = 8.0 µW）和 104 的高 ROFF/RON 比率。这凸显了高熵插入材料在开发具有独特运行机制的印刷忆阻器方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Materials 工程技术-材料科学：综合

CiteScore

43.00

自引率

4.10%

发文量

2182

审稿时长

2 months

期刊介绍： Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.