Study on the interfacial microstructure and fracture mechanism of Al/Mg composites with Zn interlayer by cyclic hot pressing

IF 5.8 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Chen Liu, Yongchang Zhu, Ye Ma, Zhiyang Gao, Dan Ye, Qirong Li
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引用次数: 0

Abstract

Using the cyclic hot pressing method, Al/Mg laminated composites with a Zn interlayer were prepared, and the effect of temperature on the composite interfaces was studied. At 420℃, the composites interface is composed of HCP-Zn solid solution near the Al side and Laves phase near the Mg side. At 460℃, FCC-Al phase and τ-phase appear near the Al side, while τ-phase and HCP-Mg solid solution appear near the Mg side. Above 500℃, the interface is mainly composed of Al-Mg intermetallic compounds. The change of solubility during the formation of the composite causes the polarization of solute atoms in Zn and Al solid solutions, resulting in defects, such as increased grain boundary stress and lattice distortion. These defects lead to failure of the interface near the aluminum side of the composites. Composites prepared at 420℃ show the best ductile fracture properties. With the increase of preparation temperature, the fracture mode is transformed into brittle fracture induced by β-phase.
通过循环热压研究带有锌夹层的铝/镁复合材料的界面微观结构和断裂机理
利用循环热压法制备了带有锌夹层的铝/镁层压复合材料,并研究了温度对复合材料界面的影响。在 420℃时,复合材料界面在靠近铝一侧由 HCP-Zn 固溶体组成,在靠近镁一侧由 Laves 相组成。在 460℃ 时,靠近铝一侧出现 FCC-Al 相和τ 相,靠近镁一侧出现τ 相和 HCP-Mg 固溶体。在 500℃ 以上,界面主要由铝镁金属间化合物组成。复合材料形成过程中溶解度的变化会导致 Zn 和 Al 固溶体中溶质原子的极化,从而产生晶界应力增大和晶格畸变等缺陷。这些缺陷导致复合材料铝侧附近的界面失效。在 420℃下制备的复合材料具有最佳的韧性断裂性能。随着制备温度的升高,断裂模式转变为由β相诱导的脆性断裂。
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来源期刊
Journal of Alloys and Compounds
Journal of Alloys and Compounds 工程技术-材料科学:综合
CiteScore
11.10
自引率
14.50%
发文量
5146
审稿时长
67 days
期刊介绍: The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.
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