Investigation of resistive switching behavior driven by active and passive electrodes in MoO2–MoS2 core shell nanowire memristors

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-18 DOI:10.1063/5.0233927

Renu Yadav, Saroj Poudyal, Bubunu Biswal, Ramesh Rajarapu, Prahalad Kanti Barman, Kostya S. Novoselov, Abhishek Misra

{"title":"Investigation of resistive switching behavior driven by active and passive electrodes in MoO2–MoS2 core shell nanowire memristors","authors":"Renu Yadav, Saroj Poudyal, Bubunu Biswal, Ramesh Rajarapu, Prahalad Kanti Barman, Kostya S. Novoselov, Abhishek Misra","doi":"10.1063/5.0233927","DOIUrl":null,"url":null,"abstract":"Memristive devices based on layered materials have the potential to enable low power electronics with ultra-fast operations toward the development of next generation memory and computing technologies. Memristor performance and switching behavior crucially depend on the switching matrix and on the type of electrodes used. In this work, we investigate the effect of different electrodes in 1D MoO2–MoS2 core shell nanowire memristors by highlighting their role in achieving distinct switching behavior. Analog and digital resistive switching are realized with carbon based passive (multi-layer graphene and multiwall carbon nanotube) and 3D active metal (silver and nickel) electrodes, respectively. Temperature dependent electrical transport studies of the conducting filament down to cryogenic temperatures reveal its semiconducting and metallic nature for passive and active top electrodes, respectively. These investigations shed light on the physics of the filament formation and provide a knob to design and develop the memristors with specific switching characteristics for desired end uses.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0233927","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Memristive devices based on layered materials have the potential to enable low power electronics with ultra-fast operations toward the development of next generation memory and computing technologies. Memristor performance and switching behavior crucially depend on the switching matrix and on the type of electrodes used. In this work, we investigate the effect of different electrodes in 1D MoO2–MoS2 core shell nanowire memristors by highlighting their role in achieving distinct switching behavior. Analog and digital resistive switching are realized with carbon based passive (multi-layer graphene and multiwall carbon nanotube) and 3D active metal (silver and nickel) electrodes, respectively. Temperature dependent electrical transport studies of the conducting filament down to cryogenic temperatures reveal its semiconducting and metallic nature for passive and active top electrodes, respectively. These investigations shed light on the physics of the filament formation and provide a knob to design and develop the memristors with specific switching characteristics for desired end uses.

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二氧化钼-MoS2 芯壳纳米线忆阻器中有源和无源电极驱动的电阻开关行为研究

基于层状材料的薄膜器件具有实现低功耗电子器件和超高速运行的潜力，可促进下一代存储器和计算技术的发展。忆阻器的性能和开关行为主要取决于开关矩阵和所用电极的类型。在这项工作中，我们研究了一维 MoO2-MoS2 芯壳纳米线忆阻器中不同电极的影响，强调了它们在实现不同开关行为中的作用。我们分别使用碳基被动电极（多层石墨烯和多壁碳纳米管）和三维主动金属电极（银和镍）实现了模拟和数字电阻开关。对低至低温的导电丝进行的随温度变化的电传输研究显示，无源和有源顶部电极分别具有半导体和金属性质。这些研究揭示了灯丝形成的物理学原理，并为设计和开发具有特定开关特性的忆阻器提供了诀窍，以满足所需的最终用途。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.