Low-frequency noise of MoTe2 transistor: effects on ambipolar carrier transport and CYTOP doping

IF 5.5 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanoscale Research Letters Pub Date : 2024-11-19 DOI:10.1186/s11671-024-04068-8

Wonjun Shin, Dong Hyun Lee, Raksan Ko, Ryun-Han Koo, Hocheon Yoo, Sung-Tae Lee

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Abstract

Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focused on characterizing the LFN of devices. However, the LFN characteristics of the ambipolar transistors have been rarely demonstrated. Herein, we investigate the effects of ambipolar carrier transport and CYTOP-induced p-type doping on low-frequency noise characteristics of MoTe₂ transistors. The source of the 1/f noise differs between the n-type (electron transport) and p-type (hole transport) modes. Notably, the influence of contact resistance is more pronounced in the n-type mode. CYTOP doping suppresses the n-type mode by introducing hole doping effects. Furthermore, CYTOP doping mitigates the impact of contact resistance on excess noise.

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MoTe2 晶体管的低频噪声：对伏极载流子传输和 CYTOP 掺杂的影响。

半导体器件的低频噪声（LFN）特性对了解其工作原理，尤其是材料缺陷具有重要意义。因此，大量研究工作都集中在描述器件的低频噪声特性上。然而，伏极晶体管的 LFN 特性却很少得到证实。在此，我们研究了伏极载流子传输和 CYTOP 诱导的 p 型掺杂对 MoTe2 晶体管低频噪声特性的影响。1/f 噪声的来源在 n 型（电子传输）和 p 型（空穴传输）模式之间有所不同。值得注意的是，接触电阻对 n 型模式的影响更为明显。通过引入空穴掺杂效应，CYTOP 掺杂抑制了 n 型模式。此外，CYTOP 掺杂还减轻了接触电阻对过量噪声的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanoscale Research Letters 工程技术-材料科学：综合

CiteScore

11.30

自引率

0.00%

发文量

110

审稿时长

48 days

期刊介绍： Nanoscale Research Letters (NRL) provides an interdisciplinary forum for communication of scientific and technological advances in the creation and use of objects at the nanometer scale. NRL is the first nanotechnology journal from a major publisher to be published with Open Access.