Halogen Radical-Activated Perovskite-Substrate Buried Heterointerface for Achieving Hole Transport Layer-Free Tin-Based Solar Cells with Efficiencies Surpassing 14 %

IF 16.1 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Gengling Liu, Dr. Xianyuan Jiang, Yaorong He, Dr. Chun-Hsiao Kuan, Guo Yang, Wenhuai Feng, Xi Chen, Prof. Wu-Qiang Wu
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Abstract

Sn-based perovskites have emerged as one of the most promising environmentally-friendly photovoltaic materials owing to their low toxicity and exceptional optoelectronic properties. Nonetheless, the low-cost production and stable operation of Sn-based perovskite solar cells (PSCs) are still largely limited by the costly hole transport materials and the under-optimized interfaces between hole transport layer (HTL) and Sn perovskite layer. Here, we innovatively developed a chlorine radical chemical bridging (Cl-RCB) strategy that enabled to remove the HTL and optimize the indium tin oxide (ITO)/perovskite heterointerface for constructing high-performance Sn-based PSCs with simplified structures. The key is to modify the commercially-purchased ITO electrode with highly active chlorine radicals that could effectively mitigate the surface oxygen vacancies, alter the chemical constitutions, and favorably down-shifted the work function of ITO surface to be close to the valence band of perovskites. As a result, the interfacial energy barrier has been largely reduced by 0.20 eV and the interfacial carrier dynamics have been optimized at the ITO/perovskite heterointerface. Encouragingly, the efficiency of HTL-free Sn-based PSCs has been enhanced from 6.79 % to 14.20 %, which is on par with the state-of-the-art conventional HTL-containing counterparts (normally >14 % efficiency) and representing the record performance for the Sn perovskite photovoltaics in the absence of HTL. Notably, the target device exhibited enhanced stability for up to 2000 h. The Cl-RCB strategy is also versatile to be used in Pb-based and mixed Sn−Pb HTL-free PSCs, achieving efficiencies of 22.27 % and 21.13 %, respectively, all representing the advanced device performances for the carrier transport layer-free PSCs with simplified device architectures.

Abstract Image

卤素辐射激活的包晶石-衬底埋藏式异质界面实现无空穴传输层锡基太阳能电池,效率超过 14.
锡基过氧化物已成为最有前途的环保型光伏材料之一。然而,由于存在昂贵的空穴传输层(HTL)和未充分优化的界面载流子动力学,锡基包晶石太阳能电池(PSCs)的低成本生产和稳定运行仍然受到限制。在此,我们创新性地开发了一种卤素自由基化学桥接策略,能够去除空穴传输层并优化包晶石-衬底异质界面,从而构建高性能、简化的锡基 PSC。用高活性氯自由基修饰 ITO 电极可有效缓解表面氧空位,改变化学结构,并有利地降低 ITO 表面的功函数,使其接近过氧化物晶系的价带。因此,界面能垒降低了 0.20 eV,载流子动力学在 ITO/ 包罗晶异质界面得到了优化。令人鼓舞的是,不含 HTL 的锡基 PSCs 效率从 6.79% 提高到 14.20%,创下了在不含 HTL 的情况下锡包晶石光伏器件的最高性能纪录。Cl-RCB 策略还可用于构建铅基和锡铅混合无 HTL PSC,效率分别达到 22.27% 和 21.13%,均代表了无载流子传输层 PSC 的先进器件性能。
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来源期刊
CiteScore
26.60
自引率
6.60%
发文量
3549
审稿时长
1.5 months
期刊介绍: Angewandte Chemie, a journal of the German Chemical Society (GDCh), maintains a leading position among scholarly journals in general chemistry with an impressive Impact Factor of 16.6 (2022 Journal Citation Reports, Clarivate, 2023). Published weekly in a reader-friendly format, it features new articles almost every day. Established in 1887, Angewandte Chemie is a prominent chemistry journal, offering a dynamic blend of Review-type articles, Highlights, Communications, and Research Articles on a weekly basis, making it unique in the field.
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