Kaiyu Wang, Ke Wei, Ruizhe Zhang, Sheng Zhang, Jiaqi Guo, Xiaoqiang He, Jianchao Wang, Sen Huang, Yingkui Zheng, Xiaojuan Chen, Xinhua Wang, Xinyu Liu
{"title":"Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage","authors":"Kaiyu Wang, Ke Wei, Ruizhe Zhang, Sheng Zhang, Jiaqi Guo, Xiaoqiang He, Jianchao Wang, Sen Huang, Yingkui Zheng, Xiaojuan Chen, Xinhua Wang, Xinyu Liu","doi":"10.1063/5.0235740","DOIUrl":null,"url":null,"abstract":"In this work, a pulse-mode N2 plasma surface treatment process was proposed as a means of reducing plasma damage and improving the GaN/GaOx ratio on the surface before SiNx deposition, which further contributes to an enhanced density of 2DEG and a reduced sheet resistance. With the pulsed N2 plasma surface treatment combined with subsequent SiNx passivation, the fabricated GaN HEMTs exhibit negligible current collapse and suppressed leakage current. The improved behavior is attributed to the fact that the pulsed N2 plasma is capable of nitriding the surface and removing carbon contaminants as identified through x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy. Compared to the traditional continuous-wave-mode N2 plasma, the pulsed N2 plasma pre-treatment effectively prevents continuous collisions of the plasma during acceleration, thereby significantly reducing plasma damage. This work offers valuable insights for surface treatment processes in micro- and nanofabrication.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0235740","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, a pulse-mode N2 plasma surface treatment process was proposed as a means of reducing plasma damage and improving the GaN/GaOx ratio on the surface before SiNx deposition, which further contributes to an enhanced density of 2DEG and a reduced sheet resistance. With the pulsed N2 plasma surface treatment combined with subsequent SiNx passivation, the fabricated GaN HEMTs exhibit negligible current collapse and suppressed leakage current. The improved behavior is attributed to the fact that the pulsed N2 plasma is capable of nitriding the surface and removing carbon contaminants as identified through x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy. Compared to the traditional continuous-wave-mode N2 plasma, the pulsed N2 plasma pre-treatment effectively prevents continuous collisions of the plasma during acceleration, thereby significantly reducing plasma damage. This work offers valuable insights for surface treatment processes in micro- and nanofabrication.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
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Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.