Improvement of interfacial electron extraction efficiency by suppressing Auger recombination in an indium-doped mixed cationic perovskite heterostructure
{"title":"Improvement of interfacial electron extraction efficiency by suppressing Auger recombination in an indium-doped mixed cationic perovskite heterostructure","authors":"Gaofang Li, Chenguang Huang, Xiaolin Liu, Yanan Wang, Jia Lin, Chen Wang, Xian Lin, Guohong Ma, Zhiming Huang, Junhao Chu","doi":"10.1016/j.apsusc.2024.161819","DOIUrl":null,"url":null,"abstract":"The electron extraction of indium (In<sup>3+</sup>)-doped mixed cationic perovskite heterostructure, SnO<sub>2</sub>/Cs<sub>0.05</sub>(MA<sub>0.17</sub>FA<sub>0.83</sub>)<sub>0.95</sub>Pb(I<sub>0.83</sub>Br<sub>0.17</sub>)<sub>3</sub>:In<sup>3+</sup> (SnO<sub>2</sub>/M:In<sup>3+</sup>), is explored by optical pump-terahertz (THz) probe technology. The difference of the conductivity maxima (Δσ<sub>dm</sub>) of M and SnO<sub>2</sub>/M is used to calculate the electron extraction efficiency of SnO<sub>2</sub>/M with photoexcited carrier density of 2.66 × 10<sup>18</sup> ∼ 1.33 × 10<sup>19</sup> cm<sup>−3</sup>, which are 33.14 %, 32.01 %, 31.17 %, −3.73 %, and –23.66 %, respectively. The negative electron extraction efficiency of SnO<sub>2</sub>/M with photoexcited carrier density from 1.06 × 10<sup>18</sup> to 1.33 × 10<sup>19</sup> cm<sup>−3</sup> is caused by the extraction of electrons from SnO<sub>2</sub> into M. For SnO<sub>2</sub>/M:In<sup>3+</sup>, electron extraction efficiencies are 51.76 %, 52.68 %, 49.51 %, 48.03.% and 48.03 % with photoexcited carrier density increased from 2.66 × 10<sup>18</sup> cm<sup>−3</sup> to1.33 × 10<sup>19</sup> cm<sup>−3</sup>, respectively, which are all positive and about 20 % higher than that of SnO<sub>2</sub>/M, related to the suppression of Auger recombination and super-injection phenomenon by In<sup>3+</sup> doping. The insights of this investigation provide important experimental data and theoretical basis for design and production of efficient perovskite solar cells.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"2 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.apsusc.2024.161819","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The electron extraction of indium (In3+)-doped mixed cationic perovskite heterostructure, SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3:In3+ (SnO2/M:In3+), is explored by optical pump-terahertz (THz) probe technology. The difference of the conductivity maxima (Δσdm) of M and SnO2/M is used to calculate the electron extraction efficiency of SnO2/M with photoexcited carrier density of 2.66 × 1018 ∼ 1.33 × 1019 cm−3, which are 33.14 %, 32.01 %, 31.17 %, −3.73 %, and –23.66 %, respectively. The negative electron extraction efficiency of SnO2/M with photoexcited carrier density from 1.06 × 1018 to 1.33 × 1019 cm−3 is caused by the extraction of electrons from SnO2 into M. For SnO2/M:In3+, electron extraction efficiencies are 51.76 %, 52.68 %, 49.51 %, 48.03.% and 48.03 % with photoexcited carrier density increased from 2.66 × 1018 cm−3 to1.33 × 1019 cm−3, respectively, which are all positive and about 20 % higher than that of SnO2/M, related to the suppression of Auger recombination and super-injection phenomenon by In3+ doping. The insights of this investigation provide important experimental data and theoretical basis for design and production of efficient perovskite solar cells.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.