Voltage controlled magnetic properties and perpendicular magnetic anisotropy of Co2FeSi alloy thin films

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-17 DOI:10.1007/s10854-024-13849-x

Jiaming Mei, Jagadish Kumar Galivarapu, Shangqian Wang, Buyun Huang, K. Kamala Bharathi, Ke Wang

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引用次数: 0

Abstract

A series of Pt/Co₂FeSi/MgAl₂O₄/Pt thin films with Co₂FeSi thicknesses ranging from 4.5 to 6 nm are constructed to evaluate the influence of applied voltage on magnetic coercivity. It is found that the change in coercivity is around 50.04% at an applied voltage of 16 V for a 5.5 nm thin film, but increases significantly to 72.24% for a 6 nm thin film. We show evolution of perpendicular magnetic anisotropy (PMA) properties of Co₂FeSi amorphous thin films with varying thickness. The polarization of External Hall Effect (EHE) and Magneto-Optic Kerr Effect (MOKE) loops match well with magnetic hysteresis. The EHE coefficient R_s rises from 2.0 × 10^–10 to 5.5 × 10^–10 Ω cm/G with increase in thickness from 4 nm to 6.5 nm, respectively. The voltage controlled the magnetic properties of Co₂FeSi thin films might be beneficial in the development of low-power magnetic tunnel junctions [MTJs].

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Co2FeSi 合金薄膜的电压控制磁性能和垂直磁各向异性

为了评估外加电压对磁矫顽力的影响，我们构建了一系列铂/钴铁硅/镁铝氧化物/铂薄膜，其钴铁硅厚度从 4.5 纳米到 6 纳米不等。研究发现，当外加电压为 16 V 时，5.5 nm 薄膜的矫顽力变化率约为 50.04%，而 6 nm 薄膜的矫顽力变化率则显著增加到 72.24%。我们展示了不同厚度 Co2FeSi 非晶薄膜垂直磁各向异性（PMA）特性的演变。外霍尔效应（EHE）和磁光克尔效应（MOKE）回路的极化与磁滞非常吻合。随着厚度从 4 纳米增加到 6.5 纳米，外霍尔效应系数 Rs 分别从 2.0 × 10-10 Ω cm/G 上升到 5.5 × 10-10 Ω cm/G。电压控制 Co2FeSi 薄膜的磁性能可能有利于低功率磁性隧道结 [MTJs] 的开发。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.