Analyzing negative differential resistance and capacitive effects in SiOx-based resistive switching devices for security applications

Abstract

In this work, we analyze the negative differential resistance and capacitive effects in SiO_x-based resistive switching devices. The cause of the negative differential effect has been investigated through the study of the switching mechanism in the devices. It has been observed that there is a combination of trap-controlled space charge limited conduction and trap-assisted Poole-Frenkel effect in the devices. Trapping and de-trapping of injected electrons in the defects within the silica structure causes the negative differential resistance effect. This characteristic feature can be employed to design chaotic circuits for security applications. In addition, the high electric field developed in the device compared to the applied field during the change of bias voltage from ±5V–0V, results in a capacitor discharge-like effect. This work will be a step forward in achieving the global Sustainable Development Goal of Peace, Justice, and Strong Institutions (SDG 16).