Hetero dielectric based dual material gate AlGaN channel MISHEMT for enhanced electrical characteristics

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-11-12 DOI:10.1016/j.mejo.2024.106465

Sreelekshmi P.S., Jobymol Jacob

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引用次数: 0

Abstract

Herein, we report an AlGaN channel metal insulator semiconductor high electron mobility transistor (MISHEMT) in dual material gate (DMG) architecture with two different dielectrics as gate insulator for enhancing the DC performance of the device. The use of a high-k dielectric material as gate insulator below gate metal 1 and a low-k dielectric below gate metal 2 results in significant threshold voltage variation along the channel. This contributes to improved average carrier velocity which in turn results in better current drive. The proposed device exhibits a peak current of 162 mA/mm at zero gate bias, whereas, the DMG and single material gate (SMG) AlGaN channel HEMTs offer currents of 137 mA/mm and 125 mA/mm respectively. The peak transconductances are about 24.66 mS/mm, 23.68 mS/mm and 22.71 mS/mm respectively for the proposed device, DMG and SMG HEMTs. The proposed device reduces the OFF current by an order of

1 0^{6}

compared to that of DMG HEMT.

查看原文本刊更多论文

基于异质介质的双材料栅氮化铝沟道 MISHEMT，可增强电气特性

在此，我们报告了一种采用双材料栅极（DMG）结构的 AlGaN 沟道金属绝缘体半导体高电子迁移率晶体管（MISHEMT），该器件采用两种不同的电介质作为栅极绝缘体，以提高器件的直流性能。在栅极金属 1 下方使用高 k 电介质材料作为栅极绝缘体，而在栅极金属 2 下方使用低 k 电介质，从而使沟道沿线的阈值电压发生显著变化。这有助于提高平均载流子速度，从而实现更好的电流驱动。在栅极偏置为零时，拟议器件的峰值电流为 162 mA/mm，而 DMG 和单材料栅极 (SMG) 氮化铝沟道 HEMT 的电流分别为 137 mA/mm 和 125 mA/mm。拟议器件、DMG 和 SMG HEMT 的峰值跨导分别约为 24.66 mS/mm、23.68 mS/mm 和 22.71 mS/mm。与 DMG HEMT 相比，拟议器件的关断电流降低了 106 个数量级。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.