Hyeji Park , Jaeseo Park , Sang-Woo Kang , Soo-Hwan Jeong
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引用次数: 0
Abstract
Two-dimensional (2D) MoS2, part of the transition metal dichalcogenides family, has emerged as a promising candidate for wearable strain sensors owing to its unique attributes, including mechanical flexibility, low toxicity, tunable and high electrical properties. MoS2-based sensors exhibit higher gauge factors (∼760 for monocrystalline, ∼56.5 for polycrystalline) and a lower limit of detection than conventional metal sensors. We report an advanced strain sensor with ultra-high sensitivity to minute deformations, exploiting a three-dimensional nanostructured-2D MoS2 (3DN-MoS2) with an arch-like configuration. The nanoarchstructured MoS2-based strain sensor (NaM-SS) achieves exceptional gauge factors, exceeding 1500 for tensile strain, using 3DN-MoS2 sensing material in conjunction with a poly-dimethylsiloxane support. This piezo-resistive sensor, fabricated through an eco-friendly and straightforward process, exhibits remarkable gauge factors at three levels: 1500 (ε < 0.55 %), 13,500 (0.55 %< ε ≤ 0.75 %), and 37,000 (0.75 % < ε ≤ 1.2 %). The sensor’s limit of detection stands at a subtle tensile strain ε of 0.02 %. Furthermore, its feasibility is validated by its ability to monitor various human physical motions, including eye blinking, blood pulsation, and muscle activity. Our findings indicate significant potential for precision strain sensors in applications requiring ultra-high sensitivity, such as detecting subtle biomedical signals, meticulous machinery control, and structural health monitoring.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...