Zhiqing Zhang , Zhiguo Wang , Shuai Yang , Fei Li , Qingqing Ke
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引用次数: 0
Abstract
The quality of ultrasound and photoacoustic imaging primarily depends on the performance of piezoelectric transducer elements, which is closely related to the acoustic and electrical properties of piezoelectric materials. With the increasing demand for high-performance, low-cost piezoelectric materials, a high-temperature-resistant <001>-textured ferroelectric ceramic Pb(In1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 (PIN-PSN-PT) has been developed. In recent years, low-cost textured ceramic materials have exhibited high piezoelectric constants (d33) and large electromechanical coupling coefficients (kt). In this study, an ultrasonic transducer based on PIN-PSN-PT textured ceramic was successfully manufactured for the first time. The transducer has a center frequency of 4.7 MHz, −6 dB bandwidth of 60 %, effective kt of 0.76, and two-way insertion loss (IL) of −34 dB. Photoacoustic imaging experiments on carbon fiber-reinforced polymer (CFRP) were conducted to evaluate the sensitivity and imaging quality of the transducer. The results indicate that the use of PIN-PSN-PT textured ceramics holds great potential in developing acoustic sensors for photoacoustic non-destructive testing applications.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...