{"title":"Manipulating dwell time and spin polarization via δ-doping for electrons in spin-orbit-coupling modulated magnetic nanostructure","authors":"Li Wen, Mao-Wang Lu, Jia-Li Chen, Sai-Yan Chen, Xue-Li Cao, An-Qi Zhang","doi":"10.1016/j.cjph.2024.11.004","DOIUrl":null,"url":null,"abstract":"<div><div>With the help of atomic-layer doping technology, we theoretically explore how to use a δ-potential to manipulate a temporal electron-spin splitter (TESS), which is based on a spin-orbit-coupling (SOC) modulated magnetic nanostructure. Due to the SOC, the dwell time still depends on electron spins even if a δ-doping is embedded inside the TESS. Moreover, both the magnitude and sign of spin polarization ratio can be controlled by tuning the weight or position of the δ-doping. Therefore, a structurally manipulable TESS device can be obtained for semiconductor spintronic device applications.</div></div>","PeriodicalId":10340,"journal":{"name":"Chinese Journal of Physics","volume":"92 ","pages":"Pages 1275-1282"},"PeriodicalIF":4.6000,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0577907324004325","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
With the help of atomic-layer doping technology, we theoretically explore how to use a δ-potential to manipulate a temporal electron-spin splitter (TESS), which is based on a spin-orbit-coupling (SOC) modulated magnetic nanostructure. Due to the SOC, the dwell time still depends on electron spins even if a δ-doping is embedded inside the TESS. Moreover, both the magnitude and sign of spin polarization ratio can be controlled by tuning the weight or position of the δ-doping. Therefore, a structurally manipulable TESS device can be obtained for semiconductor spintronic device applications.
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