High efficiency Sb2(S, Se)3 thin-film solar cells by substrate-temperature-controlled vapor transport deposition method

IF 6.3 2区材料科学 Q2 ENERGY & FUELS

Solar Energy Materials and Solar Cells Pub Date : 2024-11-14 DOI:10.1016/j.solmat.2024.113232

Deyang Qin , Panpan Yang , Yuxin Pan , Youyang Wang , Yanlin Pan , Guoen Weng , Xiaobo Hu , Jiahua Tao , Junhao Chu , Hidefumi Akiyama , Shaoqiang Chen

{"title":"High efficiency Sb2(S, Se)3 thin-film solar cells by substrate-temperature-controlled vapor transport deposition method","authors":"Deyang Qin , Panpan Yang , Yuxin Pan , Youyang Wang , Yanlin Pan , Guoen Weng , Xiaobo Hu , Jiahua Tao , Junhao Chu , Hidefumi Akiyama , Shaoqiang Chen","doi":"10.1016/j.solmat.2024.113232","DOIUrl":null,"url":null,"abstract":"<div><div>Antimony chalcogenide (Sb<sub>2</sub>(S, Se)<sub>3</sub>) semiconductor has recently emerged as a popular photovoltaic material for thin-film solar cells because of its high light absorption coefficient and tunable absorption band gap. The vapour transport deposition (VTD) approach has shown promise in fabricating Sb<sub>2</sub>(S, Se)<sub>3</sub> solar cells. However, conventional VTD depends on varying substrate positions for managing the temperature differential between source and substrate. This phenomenon leads to unstable film flaws that trigger a decline in open-circuit voltage (<em>V</em><sub>OC</sub>) and the development of profound-level defects. Therefore, a novel method for fabricating Sb<sub>2</sub>(S, Se)<sub>3</sub> solar cells based on a double-temperature evaporation furnace named substrate temperature–controlled vapour transport deposition method (STC-VTD) is presented in this study. The initial application of the modified VTD method yielded a solar cell with a power conversion efficiency (PCE) of 7.56 %, which is the highest PCE obtained through single evaporation VTD. Deep-level transient spectroscopy measurements reveal that the defect levels generated in the solar cells are passivated via the STC-VTD method. This work proposes substrate temperature–independent control for other physical vapour preparation methods, paving a new direction for further applications of vapour transport technology.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"280 ","pages":"Article 113232"},"PeriodicalIF":6.3000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024824005440","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}

引用次数: 0

Abstract

Antimony chalcogenide (Sb₂(S, Se)₃) semiconductor has recently emerged as a popular photovoltaic material for thin-film solar cells because of its high light absorption coefficient and tunable absorption band gap. The vapour transport deposition (VTD) approach has shown promise in fabricating Sb₂(S, Se)₃ solar cells. However, conventional VTD depends on varying substrate positions for managing the temperature differential between source and substrate. This phenomenon leads to unstable film flaws that trigger a decline in open-circuit voltage (V_OC) and the development of profound-level defects. Therefore, a novel method for fabricating Sb₂(S, Se)₃ solar cells based on a double-temperature evaporation furnace named substrate temperature–controlled vapour transport deposition method (STC-VTD) is presented in this study. The initial application of the modified VTD method yielded a solar cell with a power conversion efficiency (PCE) of 7.56 %, which is the highest PCE obtained through single evaporation VTD. Deep-level transient spectroscopy measurements reveal that the defect levels generated in the solar cells are passivated via the STC-VTD method. This work proposes substrate temperature–independent control for other physical vapour preparation methods, paving a new direction for further applications of vapour transport technology.

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通过基底温控气相传输沉积法实现高效 Sb2（S，Se）3 薄膜太阳能电池

砷化锑（Sb2(S, Se)3）半导体因其高光吸收系数和可调的吸收带隙，最近已成为薄膜太阳能电池的一种流行光电材料。气相传输沉积（VTD）方法在制造 Sb2（S，Se）3 太阳能电池方面已显示出良好的前景。然而，传统的 VTD 依赖于不同的基底位置来管理源和基底之间的温差。这种现象会导致不稳定的薄膜缺陷，引发开路电压（VOC）下降和深层次缺陷的产生。因此，本研究提出了一种基于双温蒸发炉的新型 Sb2(S, Se)3 太阳能电池制造方法，并将其命名为 "基底温控汽相传输沉积法（STC-VTD）"。改进型 VTD 方法的初步应用产生了一种功率转换效率 (PCE) 为 7.56 % 的太阳能电池，这是通过单蒸发 VTD 获得的最高 PCE。深层瞬态光谱测量结果表明，通过 STC-VTD 方法，太阳能电池中产生的缺陷层被钝化。这项工作为其他物理蒸气制备方法提出了与衬底温度无关的控制方法，为蒸气传输技术的进一步应用铺平了新的道路。

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来源期刊

Solar Energy Materials and Solar Cells 工程技术-材料科学：综合

CiteScore

12.60

自引率

11.60%

发文量

513

审稿时长

47 days

期刊介绍： Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.