Synthesis of Sn-catalyzed Ge nanowires and Ge/Si heterostructures via a gradient method

IF 2.7 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Letters Pub Date : 2024-11-07 DOI:10.1016/j.matlet.2024.137674

Xianjun Zhu , Ya Shen , Ileana Florea , Pere Roca i Cabarrocas , Wanghua Chen

引用次数: 0

Abstract

In this study, we investigate the growth of Ge nanowires (NWs) using a gas supply gradient method during plasma-enhanced chemical vapor deposition (PECVD), focusing on the effects of GeH₄ partial pressure and total chamber pressure on NWs morphology. By adjusting either the GeH₄ flow rate or the total pressure, we explored a gradient method to manipulate the growth process. Scanning electron microscopy (SEM) images revealed that, even with constant GeH₄ partial pressure, variations in total pressure significantly influenced NWs diameter and structure. Furthermore, elemental mapping and compositional analysis demonstrated the presence of a Ge/Si heterostructure with a Sn catalyst at the apex and an amorphous Si layer encapsulating the NW surface.

查看原文本刊更多论文

通过梯度法合成锡催化的 Ge 纳米线和 Ge/Si 异质结构

在本研究中，我们利用等离子体增强化学气相沉积（PECVD）过程中的气体供应梯度法研究了 Ge 纳米线（NWs）的生长，重点研究了 GeH4 分压和腔室总压对 NWs 形态的影响。通过调节 GeH4 的流速或总压，我们探索了一种梯度方法来操纵生长过程。扫描电子显微镜（SEM）图像显示，即使 GeH4 分压恒定，总压的变化也会显著影响 NWs 的直径和结构。此外，元素图谱和成分分析表明了 Ge/Si 异质结构的存在，其顶点为锡催化剂，无定形硅层包裹着 NW 表面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Materials Letters 工程技术-材料科学：综合

CiteScore

5.60

自引率

3.30%

发文量

1948

审稿时长

50 days

期刊介绍： Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive