Hydrothermal growth of potassium tantalate niobate crystals

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-30 DOI:10.1016/j.jcrysgro.2024.127983

Jingfang Tong , Haitao Zhou , Huajian Yu , Wenyuan Wu , Xudong Song , Weidi Zhao , Changlong Zhang , Xuping Wang

引用次数: 0

Abstract

Potassium tantalum niobate (KTa_1−xNb_xO₃, KTN) is a solid-solution crystal composed of potassium tantalate and potassium niobate, known for exhibiting the most substantial quadratic electro-optic effect recorded to date. The properties and crystallographic phases of KTN, varying from cubic (paraelectric) to tetragonal or orthorhombic (ferroelectric), are critically dependent on the tantalum-to-niobate ratio and the material’s homogeneity. KTN in the cubic phase, particularly near the cubic-tetragonal phase boundary, exhibits a high electro-optic coefficient, making it highly suitable for holographic storage applications. We employed both the cooling hydrothermal method and the temperature-difference hydrothermal method to obtain KTa_1−xNb_xO₃ (x = 0.37) crystals with uniform composition and high quality.

查看原文本刊更多论文

钽酸铌酸钾晶体的水热生长

铌酸钽钾（KTa1-xNbxO3，KTN）是一种由钽酸钾和铌酸钾组成的固溶体晶体，因显示出迄今为止最显著的二次电光效应而闻名。钽铌酸钾的性质和结晶相从立方（顺电）到四方或正方（铁电）不等，主要取决于钽铌酸钾的比例和材料的均匀性。立方相的 KTN，尤其是在立方-四方相边界附近，具有很高的电光系数，因此非常适合全息存储应用。我们采用冷却水热法和温差水热法获得了成分均匀、质量上乘的 KTa1-xNbxO3 (x = 0.37) 晶体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.