Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-11-02 DOI:10.1016/j.jcrysgro.2024.127979

T.M. Tran , A. Kassem , V. Ottapilakkal , P. Vuong , R. Gujrati , M. Bourras , A. Srivastava , A. Perepeliuc , T. Moudakir , S. Gautier , S. Bouchoule , M. Tchernycheva , P.L. Voss , S. Sundaram , J.P. Salvestrini , A. Ougazzaden

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引用次数: 0

Abstract

Individually transferrable GaN-based MQWs micro-LED structures grown on two-dimensional (2D) hexagonal boron nitride (h-BN) have been demonstrated. Different sizes (60 × 30 µm, 60 × 60 µm, 90 × 60 µm and 90 × 90 µm) of GaN-based LED heterostructures on layered h-BN were grown on dielectric SiN patterned sapphire substrates using Metal Organic Vapor Phase Epitaxy (MOVPE). Scanning electron microscope (SEM) images show micro-LEDs were grown with high selectivity within the mask opening areas. Consistent MQWs emission from micro-LEDs was observed at 452 ± 2 nm by cathodoluminescence (CL) spectroscopy for all micro-LED sizes. The structural and optical quality were similar to the GaN-based-LEDs grown on unpatterned substrates. In addition, we have successfully demonstrated the lift-off and transfer of individual micro-LEDs to arbitrary flexible templates using a transfer printing machine, which can be addressed by full front-end process. These studies highlight the role of combination of van der Waals (vdW) epitaxy and selective area growth (SAG) in facilitating the direct realization of dimensionally defined III-Nitride micro-LED structures and the mechanical release and transfer of these micro-LEDs to templates suitable for flexible display and optogenetics applications.

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在 h-BN 上生长的可转移 GaN 基微型 LED 异质结构用于光遗传学应用

在二维（2D）六方氮化硼（h-BN）上生长的可单独转移的氮化镓基 MQW 微型 LED 结构已经得到证实。利用金属有机气相外延（MOVPE）技术，在介电质SiN图案化蓝宝石衬底上生长出了不同尺寸（60 × 30 µm、60 × 60 µm、90 × 60 µm和90 × 90 µm）的层状氮化硼氮化镓基 LED 异质结构。扫描电子显微镜 (SEM) 图像显示，在掩膜开口区域内生长的微型 LED 具有很高的选择性。通过阴极发光（CL）光谱，观察到所有尺寸的微型 LED 在 452 ± 2 nm 处发出一致的 MQW。其结构和光学质量与在无图案衬底上生长的氮化镓基发光二极管相似。此外，我们还成功演示了使用转移印花机将单个微型 LED 抬起并转移到任意柔性模板上，这可以通过完整的前端工艺来实现。这些研究凸显了范德华（vdW）外延和选择性面积生长（SAG）相结合在促进直接实现尺寸确定的 III 氮化物微 LED 结构以及将这些微 LED 机械释放和转移到适合柔性显示和光遗传学应用的模板方面的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.