A. Modrić-Šahbazović , A. Smajlagić , Z. Sakić , M. Novaković , N. Latas , M. Popović , M. Đekić , S. Isaković , A. Salčinović Fetić
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引用次数: 0
Abstract
This study examines the synthesis of ZnO powder via the sol–gel method at temperatures of 25 °C and 60 °C. Characterization was conducted using standard techniques to investigate how these temperature conditions influence the physicochemical properties of the resulting material. XRD analysis confirmed high crystallinity with a pure hexagonal wurtzite structure, with average crystallite sizes of approximately 20 nm at 25 °C and 38 nm at 60 °C. Both SEM and TEM techniques established needle-like nanorods at 25 °C and nanoflower-like structures at 60 °C. Analyzing the high-resolution XPS spectra of the Zn2p and O1s photoelectron lines revealed a predominant Zn(II) state, with the contribution of ZnO increasing from 14.6 at.% to 41.6 at.% at higher temperatures. This change was accompanied by a decrease in defective oxygen and water content. Furthermore, DSC analysis revealed significant differences in thermal properties of ZnO powders synthesized at 25 °C and 60 °C, with distinct endothermic peaks around 120 °C corresponding to the evaporation of the solvent used in the synthesis process. The energy required for phase transitions was notably higher for the 25 °C synthesis, indicating greater thermal stability and energy demands compared to the 60 °C synthesis.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.