Numerical study of the effect of anisotropy and field dependence of critical current on AC loss in REBCO coated conductors and stacks

IF 5.6 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Wenhao Li , Zhenan Jiang , Difan Zhou , Chuanbing Cai
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引用次数: 0

Abstract

High-temperature superconducting (HTS) AC electrical devices generally carry AC transport currents and are exposed to AC external magnetic fields with arbitrary orientations. Realistic HTS coated conductors (CCs) show diverse critical current anisotropy and field dependence (Ic(B,θ)), which directly affect the superconducting behavior. However, under complex electromagnetic (EM) conditions, the discrepancies in AC loss characteristics caused by different Ic(B,θ) features are still unclear. Moreover, the selection of CCs with desirable Ic(B,θ) features to further reduce AC loss under various EM conditions remains overlooked. In this work, the transport AC loss (Qt) (without field), magnetization loss (Qm), and total AC loss (Qtot) of the nearly isotropic Shanghai Creative (SCST) CC and the strongly anisotropic Fujikura (FYSC) CC, along with their stacks, are investigated in the range of 90° and 90° (parallel to the CC wide surface) field angles based on the H-formulation. The results show that, due to the opposite angular dependence of Ic, the effective penetration fields of these two CCs or stacks exhibit distinct trends with the field angle, and the Qm in the nearly isotropic CC is less dominated by the perpendicular field component compared to that in the strongly anisotropic CC. Furthermore, due to the different field dependence of Ic at various field angles, the two CCs or stacks exhibit opposite flux flow loss behaviors with the field angle. Overall, the SCST CC and its stack show lower Qtot within the angle range around 0°, and this range expands as the external field increases, while the FYSC CC and its stack show lower Qtot at the remaining angles. This is further explained by analyzing the field distribution and Qtot of each tape in the stacks. This paper clarifies the discrepancies in AC loss caused by different Ic(B,θ) and identifies the applicable EM conditions for different REBCO materials to reduce AC loss, providing valuable references for material selection to minimize loss in HTS AC devices across different scenarios.
各向异性和临界电流场依赖性对 REBCO 涂层导体和叠层交流损耗影响的数值研究
高温超导(HTS)交流电气设备通常携带交流传输电流,并暴露在任意方向的交流外磁场中。现实中的 HTS 涂层导体(CC)显示出多种临界电流各向异性和磁场依赖性(Ic(B,θ)),这直接影响到超导行为。然而,在复杂的电磁(EM)条件下,不同的 Ic(B,θ)特性导致的交流损耗特性差异仍不清楚。此外,如何选择具有理想 Ic(B,θ)特性的 CC 以进一步降低各种电磁条件下的交流损耗仍被忽视。在这项工作中,基于 H 公式,研究了近各向同性的上海创意(SCST)CC 和强各向异性的藤仓(FYSC)CC 及其叠层在 90° 和 90°(平行于 CC 宽表面)场角范围内的传输交流损耗(Qt)(无场)、磁化损耗(Qm)和总交流损耗(Qtot)。结果表明,由于 Ic 的角度依赖性相反,这两种 CC 或堆栈的有效穿透场随场角的变化呈现出不同的趋势,与强各向异性 CC 中的 Qm 相比,近各向同性 CC 中的 Qm 受垂直场分量的影响较小。此外,由于 Ic 在不同磁场角下的磁场依赖性不同,两个 CC 或堆栈随着磁场角的变化表现出相反的通量流损失行为。总体而言,SCST CC 及其堆栈在 0° 左右的角度范围内表现出较低的 Qtot,而且随着外场的增加,这一范围也在扩大,而 FYSC CC 及其堆栈在其余角度则表现出较低的 Qtot。通过分析堆栈中每个磁带的场分布和 Qtot,可以进一步解释这一现象。本文阐明了不同 Ic(B,θ) 造成的交流损耗差异,并确定了不同 REBCO 材料降低交流损耗的适用电磁条件,为在不同情况下选择材料以尽量减少 HTS 交流器件的损耗提供了有价值的参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
3.90
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